2sk3453 TOSHIBA Semiconductor CORPORATION, 2sk3453 Datasheet - Page 5

• Manufacturer Part Number: 2sk3453
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

0.03
0.01
100
0.3
0.1
30
10
3
1
1
Curves must be derated linearly
with increase in temperature.
*
I D max (pulsed) *
I D max (continuous)
Single nonrepetitive pulse
Tc = 25°C
Drain-source voltage V
DC operation
Tc = 25°C
0.001
Safe operating area
0.01
10
0.1
10
10 μ
1
0.2
0.1
Duty = 0.5
0.05
0.02
0.01
Single pulse
1 ms *
100 μ
100
DS
(V)
100 μs *
1 m
1000
Pulse width t
r
th
10 m
5
− t
R
V
w
DD
G
w
= 25 Ω
= 90 V, L = 7.5 mH
(S)
500
400
300
200
100
−15 V
0
15 V
25
100 m
Test circuit
Channel temperature (initial) T
50
P DM
Duty = t/T
R th (ch-c) = 1.56°C/W
1
t
75
E
T
AS
Ε AS
– T
V
DD
=
ch
100
B
Wave form
1
2
VDSS
I
⋅
AR
L
10
⋅
2 I
ch
⋅
125
⎛
⎜
⎜
⎝
B VDSS
(°C)
V
DS
B VDSS
2006-11-08
2SK3453
150
−
V DD
⎞
⎟
⎟
⎠