2sk3403 TOSHIBA Semiconductor CORPORATION, 2sk3403 Datasheet - Page 2

• Manufacturer Part Number: 2sk3403
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Source-Drain Ratings and Characteristics
Marking
Gate leakage current
Gate-source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
Gate-source charge
Gate-drain charge
Continuous drain reverse current (Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Characteristics
Characteristics
K3403
Rise time
Turn-on time
Fall time
Turn-off time
(Note 1)
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
(Tc = 25°C)
V
V
R
Symbol
(BR) GSS
(BR) DSS
DS (ON)
⎪Y
I
I
C
C
C
Q
Q
GSS
DSS
V
t
t
Q
oss
on
off
rss
t
t
iss
gs
gd
th
fs
r
f
Symbol
g
V
⎪
I
I
DRP
Q
DSF
DR
t
rr
rr
V
I
V
I
V
V
V
V
V
Duty < = 1%, t
G
D
V
GS
DS
DS
GS
DS
DS
DD
GS
= 10 μA, V
= 10 mA, V
10 V
I
I
dI
0 V
DR
DR
= 450 V, V
= 10 V, I
= 10 V, I
= 25 V, V
= ±25 V, V
= 10 V, I
∼ − 360 V, V
DR
2
= 13 A, V
= 13 A, V
(Ta = 25°C)
/dt = 100 A/μs
Test Condition
w
D
D
DS
D
GS
GS
= 10 μs
Test Condition
GS
= 1 mA
= 6 A
DS
= 6 A
GS
= 0 V
= 0 V
GS
GS
= 0 V, f = 1 MHz
I
D
= 0 V
= 0 V
= 10 V, I
= 6 A
⎯
⎯
= 0 V
= 0 V,
V
DD
D
R
∼ − 200 V
L
= 13 A
33.3 Ω
=
Output
450
Min
±30
Min
3.0
3.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1600
Typ.
0.29
Typ.
220
300
5.8
3.4
17
28
45
10
56
34
19
15
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2006-11-06
2SK3403
−1.7
Max
Max
±10
100
5.0
0.4
⎯
⎯
⎯
⎯
⎯
13
52
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
nC
μC
μA
μA
pF
ns
ns
Ω
V
V
V
S
A
A
V