2sk3468-01 Fuji Electric holdings CO.,Ltd, 2sk3468-01 Datasheet - Page 2
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2sk3468-01
Manufacturer Part Number
2sk3468-01
Description
N-channel Silicon Power Mosfet
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet
1.2SK3468-01.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK3468-01
Manufacturer:
FUJITSU
Quantity:
12 500
Part Number:
2SK3468-01
Manufacturer:
FUJI/富士电机
Quantity:
20 000
2SK3468-01
Characteristics
100
250
200
150
100
30
28
26
24
22
20
18
16
14
12
10
0.1
10
50
8
6
4
2
0
1
0
0.1
Typical Output Characteristics
0
0
ID=f(VDS):80µs Pulse test,Tch=25°C
Allowable Power Dissipation
PD=f(Tc)
Typical Transconductance
gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C
2
4
25
6
8 10 12 14 16 18 20 22 24 26 28 30
50
1
VDS [V]
Tc [ C]
ID [A]
75
100
20V
10
125
VGS=6.5V
8V
10V
7.5V
7.0V
150
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1
500
450
400
350
300
250
200
150
100
10
50
1
0
0
0
0
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80µs Pulse test, Tch=25°C
Maximum Avalanche Energy vs. starting Tch
E
Typical Transfer Characteristic
I
ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C
I
I
AS
AS
AS
AS
=14A
=6A
=9A
=f(starting Tch):Vcc=50V
1
VGS=6.5V
25
5
2
3
FUJI POWER MOSFET
10
50
starting Tch [ C]
7.0V
4
VGS[V]
ID [A]
15
75
5
6
100
20
7.5V
7
8
125
25
8V
9
10V
20V
150
30
10
2