2sk3210 Renesas Electronics Corporation., 2sk3210 Datasheet
2sk3210
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2sk3210 Summary of contents
Page 1
... Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance R =35m typ. DS High speed switching 4V gate drive device can be driven from 5V source Outline LDPAK G Target Specification, 1st. Edition Gate 2. Drain 3. Source 4. Drain S ADE-208-760(Z) ...
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... Absolute Maximum Ratings ( Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current I Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note duty cycle 2. Value Value at Tch = ...
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... Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Note: 4. Pulse test 2SK3210(L), 2SK3210(S) Symbol Min Typ Max Unit 150 — — V (BR)DSS 20 — ...
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... Package Dimensions (Unit: mm) 4.44 ± 0.2 10.2 ± 0.3 1.2 ± 0.2 1.27 ± 0.2 +0.2 0.86 –0.1 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 L type 4 1.3 ± 0.2 10.2 ± 0.3 2.59 ± 0.2 1.27 ± 0.2 1.2 ± 0.2 +0.2 0.4 ± 0.1 0.86 –0.1 2.54 ± 0.5 2.54 ± 0.5 S type 4.44 ± 0.2 1.3 ± 0.2 +0.2 0.1 –0.1 2.59 ± 0.2 0.4 ± 0.1 Hitachi Code LDPAK EIAJ — JEDEC — ...
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... Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 2SK3210(L), 2SK3210(S) Hitachi Asia Pte. Ltd. Hitachi Asia (Hong Kong) Ltd. 16 Collyer Quay #20-00 Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Hitachi Tower ...