2sk3921-01l Fuji Electric holdings CO.,Ltd, 2sk3921-01l Datasheet

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2sk3921-01l

Manufacturer Part Number
2sk3921-01l
Description
N-channel Silicon Power Mosfet
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet
2SK3921-01L,S,SJ
Super FAP-G Series
Note *1 Tch 150°C
Note *2 Starting Tch=25°C, I
Note *3 Repetitve rating : Pulse width limited by maximum channel temperature.
Note *4 I
http://www.fujielectric.co.jp/fdt/scd/
Thermalcharacteristics
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Non-repetitive
Maximum avalanche energy
Repetitive
Maximum avalanche energy
Maximum drain-source dV/dt
Peak diode recovery dV/dt
Maximum power dissipation
Operating and storage
temperature range
Maximum ratings and characteristic
(Tc=25°C unless otherwise specified)
Thermal resistance
Item
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
Turn-off time t
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Item
Electrical characteristics (T
Features
High speed switching
No secondary breadown
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
E
See to ‘Transient Thermal impedance’ graph.
See to ‘Avalanche Energy’ graph.
F
AS
= <
= <
= <
-I
limited by maximum channel temperrature and avalanche current.
D
, -di/dt=50A/μs, Vcc BV
off
on
AS
=27A, L=1.32mH, V
= <
c
Symbol
V
V
I
I
V
I
E
dV
dV/dt
P
T
T
D
AR
D(puls]
=25°C unless otherwise specified)
AS
D
ch
stg
DSX
DS
GS
DS
DSS
/dt
R
R
Symbol
, Tch 150°C
Symbol
V
V
I
R
g
C
C
C
td
t
td
t
Q
Q
Q
V
t
Q
th(ch-c)
th(ch-a)
GSS
f
DC-DC converters
I
r
rr
Low driving power
fs
Low on-resistance
DSS
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
SD
G
GS
GD
rr
(on)
(off)
CC
= <
=48V, R
-55 to +150
Ratings
±268
+150
Absolute maximum ratings
120
±30
719.1
270
90
67
67
27.0
20
5
2.02
G
Test Conditions
Test Conditions
I
I
V
V
f=1MHz
V
I
V
I
I
-di/dt=100A/μs
V
V
R
V
V
=50Ω
V
I
I
channel to ambient
D
D
D
F
F
channel to case
D
D
DS
GS
CC
GS
CC
GS
GS
=67A V
=67A V
= 250 μ A
= 250 μ A
DS
DS
GS
=67A
=33.5A
=33.5A
=75V
=0V
=10V
=48V I
=10V
=10 Ω
=60V
=120V V
=96V
=±30V
Unit
mJ
mJ
kV/μs
kV/μs
W
W
°C
°C
A
A
A
V
V
V
N-CHANNEL SILICON POWER MOSFET
GS
GS
D
V
V
V
V
=0V T
=33.5A
=0V
DS
VGS=-30V
Note *1
Note *2
Note *3
VDS 120V
Note *4
Ta=25 °C
Tc=25 °C
GS
DS
FUJI POWER MOSFET
Remarks
V
V
GS
GS
DS
GS
=0V
=10V
=25V
=0V
=0V
T
=V
=0V
ch
= <
ch
=25°C
GS
=25°C
T
T
ch
ch
=125°C
=25°C
Outline Drawings [mm]
Equivalent circuit schematic
Gate(G)
Min.
Min.
120
14
3.0
See to P4
Typ.
1880
Typ.
360
150
24.6
28
30
20
35
50
23
52
16
18
1.10
0.9
Source(S)
Drain(D)
Max.
2820
Max.
62.0
250
100
540
0.463
25
30.0
45
30
53
75
35
78
24
27
5.0
1.50
Units
Units
°C/W
°C/W
200509
ns
V
V
μA
nA
S
pF
nC
V
ns
μC
1

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2sk3921-01l Summary of contents

Page 1

... Super FAP-G Series Features High speed switching No secondary breadown Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) Maximum ratings and characteristic (Tc=25°C unless otherwise specified) Item Symbol Drain-source voltage DSX Continuous drain current I D Pulsed drain current I D(puls] Gate-source voltage ...

Page 2

... Characteristics Allowable Power Dissipation PD=f(Tc) 280 240 200 160 120 ° C] Typical Transfer Characteristic ID=f(VGS):80 μ s pulse test,VDS=25V,Tch=25 100 VGS[V] Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 μ s pulse test,Tch=25 0.20 VGS=5.5V 6.5V 6.0V 7.0V 7.5V 0.16 0.12 0.08 0.04 0. [A] Typical Output Characteristics ...

Page 3

... Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250 7.0 6.5 6.0 5.5 max. 5.0 4.5 4.0 3.5 min. 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 - Tch [ ° C] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz VDS [V] Typical Switching Characteristics vs. ID t=f(ID):Vcc=48V,VGS=10V,RG= td(off td(on [A] ...

Page 4

... Maximum Avalanche Current Pulsewidth I =f(t ):starting Tch= Single Pulse Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D Outline Drawings [mm] T-pack(L) http://www.fujielectric.co.jp/fdt/scd/ ° C,Vcc=48V - ...

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