2sk3857tk TOSHIBA Semiconductor CORPORATION, 2sk3857tk Datasheet

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2sk3857tk

Manufacturer Part Number
2sk3857tk
Description
Silicon N Channel Junction Type For Ecm
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
For ECM
Absolute Maximum Ratings
Marking
IDSS CLASSIFICATION
Application for Ultra-compact ECM
Gate-Drain voltage
Gate Current
Drain power dissipation (Ta = 25°C)
Junction Temperature
Storage temperature range
Note:
A-Rank
B-Rank
9
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Characteristic
140~240µA
210~350µA
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
Type Name
IDSS Classification Symbol
A :A - Rank
B :B - Rank
(Ta=25°C)
2SK3857TK
Symbol
V
T
GDO
P
I
T
stg
G
D
j
−55~125
Rating
100
125
-20
10
1
Unit
mW
mA
°C
°C
V
Equivalent Circuit
G
Weight: 2.2mg (typ.)
JEDEC
JEITA
TOSHIBA
TESM3
D
S
2SK3857TK
1.Drain
2.Source
3.Gate
1
2
2007-11-01
1.2±0.05
0.8±0.05
2-1R1A
-
-
3
Unit: mm

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2sk3857tk Summary of contents

Page 1

... Symbol Rating V -20 GDO 100 D T 125 j −55~125 T stg IDSS Classification Symbol Rank Rank 1 2SK3857TK 1.2±0.05 0.8±0.05 1 Unit °C °C 1.Drain 2.Source TESM3 3.Gate JEDEC JEITA TOSHIBA Weight: 2.2mg (typ.) Equivalent Circuit ...

Page 2

... RL= 1kΩ,Cg = 10pF,Gv=80dB, A-Curve Filter 2V, RL= 2.2kΩ,Cg = 5pF 1kHz, vin=50mV 2V, RL= 2.2kΩ,Cg = 5pF TEST SIGNAL 50% 0V Vout V DD-ID*RL 90 2SK3857TK Min Typ. Max Unit ⎯ 140 350 µA ⎯ ⎯ 370 µA ⎯ -0.1 -1.0 V ⎯ 0.9 1.3 mS ⎯ ⎯ ...

Page 3

... °C 500 400 300 + 0 0.05 V 200 – 0.05 V 100 – 0 2.0 0 (V) Drain - Source voltage V -500 -400 -300 -200 -100 0 0 100 600 500 500 3 2SK3857TK I – Ta=85℃ Ta=25℃ Ta=-40℃ -0.8 -0.6 -0.4 -0 – IDSS=330μ 0.05 V VGS = 0 V – 0.05 V – 0.1 V 1.0 2.0 ...

Page 4

... Ta = 25° 100 Drain Current 600 Drain - Source voltage V 4 2SK3857TK DGv(V)– I DSS 200 300 400 500 600 (µA) DSS VN – I DSS VN:VDD=2V Cg=10pF RL= 1kΩ f=1kHz 80dB AMP A-Curve Filter IDSS: VDS=2V ...

Page 5

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2SK3857TK 20070701-EN GENERAL 2007-11-01 ...

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