2sk2009 TOSHIBA Semiconductor CORPORATION, 2sk2009 Datasheet - Page 2

• Manufacturer Part Number: 2sk2009
• Description: N Channel Mos Type High Speed Switching, Analog Switch Applications
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Switching Time Test Circuit
Gate leakage current
Drain-source breakdown voltage
Drain cut-off current
Gate threshold voltage
Forward transfer admittance
Drain-source ON resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Characteristics
Turn-on time
Turn-off time
(Ta = 25°C)
V
R
Symbol
(BR) DSS
DS (ON)
⎪Y
I
I
C
C
C
GSS
DSS
V
t
t
oss
on
off
rss
iss
th
fs
⎪
V
I
V
V
V
I
V
V
V
V
V
D
D
GS
DS
DS
DS
DS
DS
DS
DD
DD
= 1 mA, V
= 50 mA, V
= 30 V, V
= 3 V, I
= 3 V, I
= 3 V, V
= 3 V, V
= 3 V, V
= ±10 V, V
= 3 V, I
= 3 V, I
2
D
D
D
D
Test Condition
GS
GS
GS
GS
GS
= 0.1 mA
= 50 mA
GS
= 10 mA, V
= 10 mA, V
DS
= 0
= 0, f = 1 MHz
= 0, f = 1 MHz
= 0, f = 1 MHz
= 2.5 V
= 0
= 0
GS
GS
= 0~2.5 V
= 0~2.5 V
Min
100
0.5
30
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Typ.
0.06
0.12
1.2
70
23
58
⎯
⎯
⎯
⎯
⎯
2007-11-01
2SK2009
±0.1
Max
1.5
10
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2
Unit
mS
μA
μA
pF
pF
pF
μs
Ω
V
V