2sk4075 Renesas Electronics Corporation., 2sk4075 Datasheet - Page 2

• Manufacturer Part Number: 2sk4075
• Description: Switching N-channel Power Mos Fet
• Manufacturer: Renesas Electronics Corporation.

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ELECTRICAL CHARACTERISTICS (T
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
V
TEST CIRCUIT 3 GATE CHARGE
2
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
GS
= 20
PG.
→
0 V
CHARACTERISTICS
PG.
I
G
V
= 2 mA
50
DD
R
D.U.T.
Ω
G
I
D
= 25
50
I
AS
D.U.T.
Ω
Ω
Note
Note
BV
DSS
Starting T
R
V
Note
L
DD
V
DS
L
V
DD
ch
SYMBOL
R
R
V
V
| y
t
t
I
DS(on)1
DS(on)2
C
Q
Q
I
C
C
GS(off)
Q
d(on)
d(off)
F(S-D)
Q
DSS
GSS
A
t
t
t
oss
GD
fs
iss
rss
GS
rr
r
f
G
rr
= 25°C)
|
Data Sheet D18223EJ2V0DS
V
V
V
V
V
V
V
V
f = 1 MHz
V
I
V
R
V
V
I
I
I
di/dt = 100 A/
V
0
D
D
F
F
GS
DS
GS
DS
DS
GS
GS
DS
GS
DD
GS
G
DD
GS
= 60 A, V
= 60 A, V
τ = 1 s
Duty Cycle
= 30 A
= 60 A
= 0 Ω
= 40 V, V
= 10 V, I
= 10 V, I
= 10 V
= ±20 V, V
= 10 V, I
= 4.5 V, I
= 0 V
= 20 V
= 10 V
= 32 V
= 10 V
TEST CIRCUIT 2 SWITCHING TIME
PG.
μ
τ
TEST CONDITIONS
GS
GS
D
D
D
≤
D
μ
GS
= 1 mA
= 15 A
= 30 A
= 0 V
= 0 V
1%
s
DS
= 15 A
= 0 V
R
= 0 V
G
D.U.T.
R
V
DD
L
V
Wave Form
V
Wave Form
GS
DS
MIN.
1.5
9.3
V
V
V
GS
DS
0
0
DS
TYP.
2900
10%
t
450
293
2.0
5.2
7.2
0.9
d(on)
18
16
54
54
11
15
33
33
90%
9
t
on
10% 10%
t
MAX.
±100
r
2.5
6.7
1.5
10
1
V
2SK4075
GS
t
d(off)
UNIT
t
mΩ
mΩ
off
μ
nA
pF
pF
pF
nC
nC
nC
nC
90%
ns
ns
ns
ns
ns
V
S
V
A
90%
t
f