si4462dy Vishay, si4462dy Datasheet - Page 3

• Manufacturer Part Number: si4462dy
• Description: N-channel 200-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C unless noted
Document Number: 72093
S-61005-Rev. B, 12-Jun-06
0.1
0.8
0.6
0.4
0.2
0.0
10
5
1
8
6
4
2
0
0.0
0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
= 1.5 A
0.2
On-Resistance vs. Drain Current
= 100 V
1
T
V
1
J
SD
= 150 °C
Q
g
V
- Source-to-Drain Voltage (V)
0.4
GS
I
- Total Gate Charge (nC)
D
2
Gate Charge
= 6 V
- Drain Current (A)
2
0.6
3
3
0.8
4
T
V
J
GS
= 25 °C
4
1.0
5
= 10 V
1.2
6
5
2.5
2.1
1.7
1.3
0.9
0.5
0.8
0.6
0.4
0.2
0.0
400
300
200
100
- 50
0
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
D
- 25
GS
= 1.5 A
C
= 10 V
rss
2
T
V
V
0
20
J
GS
DS
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
Capacitance
4
C
iss
50
Vishay Siliconix
C
40
oss
I
D
6
75
= 1.5 A
Si4462DY
www.vishay.com
100
60
8
125
150
10
80
3