si4477dy Vishay, si4477dy Datasheet - Page 3

• Manufacturer Part Number: si4477dy
• Description: P-channel 20-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 64829
S09-0858-Rev. A, 18-May-09
0.016
0.012
0.008
0.004
0.000
60
45
30
15
0
6
4
2
0
0.0
0
0
I
D
On-Resistance vs. Drain Current
V
= 18 A
DS
0.5
V
= 5 V
DS
15
20
Output Characteristics
Q
g
- Drain-to-Source Voltage (V)
V
I
- Total Gate Charge (nC)
GS
D
- Drain Current (A)
Gate Charge
1.0
= 5 V thru 2.5 V
V
V
V
DS
GS
GS
30
= 10 V
40
= 4.5 V
= 2.5 V
1.5
V
DS
= 15 V
V
V
45
60
GS
GS
2.0
= 1.5 V
= 2 V
2.5
60
80
6000
5000
4000
3000
2000
1000
1.5
1.2
0.9
0.6
0.3
0.0
1.8
1.5
1.2
0.9
0.6
0
- 50
0.0
0
C
rss
On-Resistance vs. Junction Temperature
- 25
I
D
T
= 18 A
C
0.5
= 125 °C
C
V
V
T
oss
GS
Transfer Characteristics
DS
5
0
T
C
J
= 25 °C
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
C
iss
25
1.0
Capacitance
10
50
Vishay Siliconix
V
1.5
GS
T
75
C
= 4.5 V
Si4477DY
= -- 55 °C
V
100
www.vishay.com
15
GS
2.0
= 2.5 V
125
2.5
150
20
3