si4134dy Vishay, si4134dy Datasheet - Page 4

• Manufacturer Part Number: si4134dy
• Description: N-channel 30-v D-s Mosfet
• Manufacturer: Vishay

Si4134DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.2
- 0.4
- 0.6
- 0.8
0.01
100
0.4
0.2
0.1
10
0
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
T
SD
0
J
= 150 °C
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
T
J
25
- Temperature (°C)
0.6
50
I
75
D
0.8
= 250 µA
0.01
100
T
0.1
10
100
J
1
0.1
= 25 °C
I
1.0
D
Safe Operating Area, Junction-to-Ambient
* V
Single Pulse
Limited by R
= 5 mA
125
T
A
GS
= 25 °C
> minimum V
New Product
V
1.2
150
DS
- Drain-to-Source Voltage (V)
DS(on)
1
*
GS
BVDSS Limited
at which R
0.06
0.05
0.04
0.03
0.02
0.01
0.00
10
DS(on)
80
64
48
32
16
0
0
0 .
0
0
is specified
On-Resistance vs. Gate-to-Source Voltage
1
I
Single Pulse Power, Junction-to-Ambient
D
1
1 ms
10 ms
100 ms
1 s
10 s
DC
= 10 A
2
V
0.01
100
GS
3
- Gate-to-Source Voltage (V)
4
Time (s)
0.1
5
S-82774-Rev. A, 17-Nov-08
Document Number: 68999
6
7
1
T
T
J
J
8
= 25 °C
= 125 °C
9
10
1
0