si4178dy Vishay, si4178dy Datasheet
si4178dy
Available stocks
Related parts for si4178dy
si4178dy Summary of contents
Page 1
... GS SO Top View Ordering Information: Si4178DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy ...
Page 2
... Si4178DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...
Page 3
... 2.0 2.5 3.0 600 500 400 300 200 100 1.6 1.4 1 1.0 0.8 0 Si4178DY Vishay Siliconix ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss ...
Page 4
... Si4178DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.0 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 3.0 2.8 2 250 μA D 2.4 2.2 2.0 1.8 1 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.050 0.045 0.040 0.035 °C J 0.030 0.025 ...
Page 5
... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 65718 S10-0212-Rev. A, 25-Jan- 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si4178DY Vishay Siliconix 50 75 100 125 150 T - Case Temperature (°C) C Power Derating www.vishay.com 5 ...
Page 6
... Si4178DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...
Page 7
... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...