si4622dy Vishay, si4622dy Datasheet - Page 5

• Manufacturer Part Number: si4622dy
• Description: Dual N-channel 30-v D-s Mosfet With Schottky Diode
• Manufacturer: Vishay

CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68695
S-81442-Rev. A, 23-Jun-08
10
10
10
10
10
10
100
0.1
10
-2
-3
-4
-5
-6
-1
1
0.0
0
Source-Drain Diode Forward Voltage
0.2
25
V
Reverse Current (Schottky)
SD
- Source-to-Drain Voltage (V)
30 V
0.4
T
T
50
J
J
= 150 °C
- Temperature (°C)
T
J
20 V
0.6
= 25 °C
75
Limited by R
0.01
100
100
0.1
0.8
10
1
0.1
10 V
Safe Operating Area, Junction-to-Ambient
* V
Single Pulse
T
DS(on)
125
GS
A
1.0
= 25 °C
> minimum V
*
V
New Product
DS
150
1.2
- Drain-to-Source Voltage (V)
1
GS
at which R
BVDSS
Limited
10
DS(on)
0.030
0.026
0.022
0.018
0.014
0.010
is specified
40
30
20
10
0
0.01
0
100 µs
100 ms
DC
1 ms
10 ms
10 s
1 s
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
100
4
V
GS
- Gate-to-Source Voltage (V)
0.1
8
Time (s)
Vishay Siliconix
12
Si4622DY
1
I
www.vishay.com
D
T
T
J
= 9.6 A
J
= 125 °C
16
= 25 °C
20
10
5