si4539ady Vishay, si4539ady Datasheet

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si4539ady

Manufacturer Part Number
si4539ady
Description
N- And P-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Quantity
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Part Number:
SI4539ADY
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Part Number:
si4539ady-T1-E3
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si4539ady-T1-GE3
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Part Number:
si4539adyT1
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XILINX
Quantity:
2 833
Notes
a.
Document Number: 71131
S-03951—Rev. B, 26-May-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
Surface Mounted on 1” x 1” FR4 Board.
i
N-Channel
N-Channel
P Channel
P-Channel
Ordering Information: Si4539ADY
J
ti
G
G
S
S
1
1
2
2
t A bi
Parameter
Parameter
1
2
3
4
V
DS
J
J
Si4539ADY-T1 (with Tape and Reel)
a
a
- 30
30
30
= 150_C)
= 150_C)
t
30
a
a
Top View
(V)
SO-8
N- and P-Channel 30-V (D-S) MOSFET
a
a
Steady State
Steady State
8
7
6
5
t v 10 sec
T
T
T
T
a
A
A
A
A
= 25_C
= 70_C
= 25_C
= 70_C
D
D
D
D
0.090 @ V
0.053 @ V
0.053 @ V
0.036 @ V
1
1
2
2
r
DS(on)
A
GS
GS
GS
Symbol
GS
Symbol
= 25_C UNLESS OTHERWISE NOTED)
T
(W)
R
R
R
= - 4.5 V
= - 10 V
= 4.5 V
J
= 10 V
V
V
I
P
P
, T
thJA
thJF
DM
I
I
I
GS
DS
D
D
S
D
D
stg
G
10 secs
1
Typ
N-Channel MOSFET
5.9
4.7
1.7
2.0
1.3
50
90
32
N-Channel
N-Channel
I
D
D
S
- 4.9
- 3.7
"20
5.9
4.9
1
1
30
(A)
Steady State
Max
62.5
110
40
4.4
3.6
0.9
1.1
0.7
- 55 to 150
30
10 secs
Typ
52
90
32
- 4.9
- 3.9
- 1.7
G
1.3
2
2
P-Channel
P-Channel MOSFET
P-Channel
Vishay Siliconix
"20
- 30
Steady State
Si4539ADY
S
D
2
2
Max
62.5
110
40
- 3.7
- 2.9
- 0.9
1.1
0.7
www.vishay.com
Unit
_C/W
C/W
Unit
_C
W
W
V
V
A
A
2-1

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si4539ady Summary of contents

Page 1

... Top View Ordering Information: Si4539ADY Si4539ADY-T1 (with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current Continuous Source Current (Diode Conduction) ...

Page 2

... Si4539ADY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Symbol Static Gate Threshold Voltage Gate Threshold Voltage Gate-Body Leakage Gate Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a a On-State Drain Current On State Drain Current a a Drain Source On State Resistance ...

Page 3

... Q - Total Gate Charge (nC) g Document Number: 71131 S-03951—Rev. B, 26-May- 3.0 3.5 4.0 1000 Si4539ADY Vishay Siliconix NCHANNEL Transfer Characteristics 55_C C 25_C Gate-to-Source Voltage (V) GS Capacitance 800 C ...

Page 4

... Si4539ADY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 150_C 0.0 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Threshold Voltage 0.4 0 250 0.0 - 0.2 - 0.4 - 0 Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www ...

Page 5

... Drain Current (A) D Document Number: 71131 S-03951—Rev. B, 26-May-03 Normalized Thermal Transient Impedance, Junction-to-Foot -2 10 Square Wave Pulse Duration (sec 3.0 3.5 4 Si4539ADY Vishay Siliconix NCHANNEL - PCHANNEL Transfer Characteristics 55_C C 25_C ...

Page 6

... Si4539ADY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate Charge 4 Total Gate Charge (nC) g Source-Drain Diode Forward Voltage 150_C 0.0 0.2 0.4 0.6 0 Source-to-Drain Voltage (V) SD Threshold Voltage 0.8 0 250 mA D 0.4 0.2 0.0 - 0 ...

Page 7

... Single Pulse 0. Document Number: 71131 S-03951—Rev. B, 26-May- Square Wave Pulse Duration (sec Square Wave Pulse Duration (sec) Si4539ADY Vishay Siliconix PCHANNEL Notes Duty Cycle Per Unit Base = R = 90_C/W thJA (t) 3 ...

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