si4214dy Vishay, si4214dy Datasheet

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si4214dy

Manufacturer Part Number
si4214dy
Description
Dual N-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
si4214dy-T1-E3
Manufacturer:
VISHAY
Quantity:
30 000
Part Number:
si4214dy-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
si4214dy-T1-GE3
Manufacturer:
VISHAY
Quantity:
30 000
Part Number:
si4214dy-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 110 °C/W.
Document Number: 64726
S09-1223-Rev. B, 29-Jun-09
Ordering Information: Si4214DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Source-Drain Current Diode Current
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
Parameter
V
DS
30
(V)
C
= 25 °C.
0.0235 at V
0.028 at V
G
G
S
S
1
1
2
2
R
DS(on)
1
2
3
4
GS
GS
(Ω)
Top View
J
= 4.5 V
= 10 V
= 150 °C)
SO-8
b, d
Dual N-Channel 30-V (D-S) MOSFET
8
7
6
5
I
D
8.5
7.8
(A)
D
D
D
D
1
1
2
2
a
A
Q
= 25 °C, unless otherwise noted
Steady-State
g
6.7
(Typ.)
t ≤ 10 s
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• PC System Power
Definition
100 % UIS Tested
Compliant to RoHS Directive 2002/95/EC
Low Current DC/DC
Symbol
R
R
thJA
thJF
Symbol
T
g
J
V
V
E
I
I
I
P
, T
DM
I
I
SM
AS
DS
GS
AS
Tested
D
S
D
®
G
stg
Power MOSFET
1
N-Channel MOSFET
Typ.
52
30
D
S
1
1
- 55 to 150
1.25
6.8
5.4
1.8
2.0
Limit
± 20
8.5
6.8
2.8
3.1
2.0
30
30
30
10
5
b, c
b, c
b, c
b, c
b, c
Vishay Siliconix
G
2
Max.
62.5
40
N-Channel MOSFET
Si4214DY
www.vishay.com
D
S
2
2
Unit
mJ
°C
W
V
A
°C/W
Unit
1

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si4214dy Summary of contents

Page 1

... Top View Ordering Information: Si4214DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Source-Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current ...

Page 2

... Si4214DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On -State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance ...

Page 3

... S09-1223-Rev. B, 29-Jun- thru 1.5 2.0 2.5 1000 800 600 400 200 1.7 1.5 1 1.1 0.9 0.7 9.6 12.8 16.0 Si4214DY Vishay Siliconix 2.0 1.6 1.2 0 ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss 0 ...

Page 4

... Si4214DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0 250 µ 0.1 - 0.4 - 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.10 0.08 0. °C J 0.04 0.02 0.00 0.8 1.0 1 100 ...

Page 5

... T - Case Temperature (°C) C Current Derating* 1.5 1.2 0.9 0.6 0.3 0.0 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si4214DY Vishay Siliconix 150 100 125 T - Ambient Temperature (°C) A Power Derating, Junction-to-Ambient www.vishay.com 150 5 ...

Page 6

... Si4214DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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