irlr7811w International Rectifier Corp., irlr7811w Datasheet

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irlr7811w

Manufacturer Part Number
irlr7811w
Description
30v Single N-channel Hexfet Power Mosfet In A D-pak Package
Manufacturer
International Rectifier Corp.
Datasheet

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Part Number:
irlr7811wCPBF
Manufacturer:
IR
Quantity:
12 500
Part Number:
irlr7811wPBF
Manufacturer:
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Part Number:
irlr7811wTR
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Applications
l
l
l
l
l
Thermal Resistance
Benefits
Absolute Maximum Ratings
www.irf.com
Notes  through „ are on page 9
I
I
I
P
P
V
T
T
R
R
R
D
D
DM
GS
STG
D
D
J
@ T
@ T
and Current
JC
JA
JA
for Telecom and Industrial Use
Converters with Synchronous Rectification
High Frequency Synchronous Buck
High Frequency Isolated DC-DC
@T
@T
Very Low RDS(on) at 4.5V V
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage
Converters for Computer Processor Power
C
C
C
A
= 100°C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Power Dissipation*
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
Parameter
Parameter
GS
SMPS MOSFET
GS
GS
@ 10V
@ 10V
V
30V
DSS
Typ.
300 (1.6mm from case )
–––
–––
–––
HEXFET
-55 to + 175
R
IRLR7811W
Max.
64„
45„
0.48
260
DS(on)
1.5
71
12
10.5m
®
Power MOSFET
Max.
110
max
2.1
50
D-Pak
PD - 94492
Units
19nC
Units
W/°C
°C/W
Q
°C
W
A
V
g
1
06/10/02

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irlr7811w Summary of contents

Page 1

... Notes  through „ are on page 9 www.irf.com SMPS MOSFET V DSS 30V GS @ 10V GS @ 10V GS 300 (1.6mm from case ) Typ. ––– ––– ––– 94492 IRLR7811W ® HEXFET Power MOSFET R max Q DS(on) g 10.5m 19nC D-Pak Max. Units 64„ 45„ A ...

Page 2

... IRLR7811W Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) V Gate Threshold Voltage Coefficient / T GS(th Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

... Fig 3. Typical Transfer Characteristics www.irf.com 1000 TOP 100 BOTTOM 10 1 0.1 10 100 Fig 2. Typical Output Characteristics 2 1 175°C 1.0 0.5 0.0 6.0 7.0 -60 -40 Fig 4. Normalized On-Resistance IRLR7811W VGS 10V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V 2.5V 2.5V 20µs PULSE WIDTH Tj = 175° Drain-to-Source Voltage (V) 64A  V = 10V GS - ...

Page 4

... IRLR7811W 10000 0V MHZ C iss = SHORTED C rss = oss = iss 1000 C oss C rss 100 Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100  T = 175 ° ° 0.1 0.0 0.5 1.0 1.5 V ,Source-to-Drain Voltage (V) SD Fig 7 ...

Page 5

... V Pulse Width Duty Factor Fig 10a. Switching Time Test Circuit V DS 90% 150 175 10 d(on) Fig 10b. Switching Time Waveforms  Notes: 1. Duty factor Peak T 0.001 0. Rectangular Pulse Duration (sec) 1 IRLR7811W D.U. µ d(off ...

Page 6

... IRLR7811W Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms 2.5 2.0 1 250µA 1.0 0.5 0.0 -75 -50 - 100 125 150 175 200 Temperature ( °C ) Fig 13. Threshold Voltage Vs. Temperature ...

Page 7

... Low Leakage Inductance Current Transformer - „ dv/dt controlled Driver same type as D.U.T. I controlled by Duty Factor "D" SD D.U.T. - Device Under Test P.W. Period D = Period Body Diode Forward Current di/dt Diode Recovery dv/dt Body Diode Forward Drop Ripple 5% ® Power MOSFETs IRLR7811W + =10V ...

Page 8

... IRLR7811W TO-252AA (D-Pak) Package Outline Dimensions are shown in millimeters (inches (. (. 1 1 ...

Page 9

... Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. Visit us at www.irf.com for sales contact information.06/02 IRLR7811W .641 ) .619 ) ...

Page 10

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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