irlr9343 International Rectifier Corp., irlr9343 Datasheet

no-image

irlr9343

Manufacturer Part Number
irlr9343
Description
-55v Single P-channel Hexfet Power Mosfet In A I-pak Package
Manufacturer
International Rectifier Corp.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
irlr9343TRPBF
Manufacturer:
PHI
Quantity:
5 000
Company:
Part Number:
irlr9343TRPBF
Quantity:
5 000
Company:
Part Number:
irlr9343TRPBF
Quantity:
25 780
Company:
Part Number:
irlr9343TRPBF
Quantity:
2 000
Features
l
l
l
l
l
l
l
l
Description
This Digital Audio HEXFET
processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery
and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD
and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability.
These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier
applications.
Notes  through ‰ are on page 10
www.irf.com
V
V
I
I
I
P
P
T
T
R
R
R
Absolute Maximum Ratings
Thermal Resistance
D
D
DM
175°C Operating Junction Temperature for
Repetitive Avalanche Capability for Robustness and
Multiple Package Options
Key Parameters Optimized for Class-D Audio
Low R
Low Q
Low Q
J
STG
Amplifier Applications
Efficiency
Ruggedness
Reliability
DS
GS
D
D
Advanced Process Technology
θJC
θJA
θJA
@ T
@ T
@T
@T
C
C
C
C
DSON
= 25°C
= 100°C
g
rr
= 25°C
= 100°C
and Q
for Better THD and Lower EMI
for Improved Efficiency
sw
for Better THD and Improved
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current c
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Clamping Pressure h
Junction-to-Case g
Junction-to-Ambient (PCB Mounted) gj
Junction-to-Ambient (free air) g
®
is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest
Parameter
Parameter
GS
GS
@ -10V
@ 10V
V
R
R
Q
T
G
J
DS
DS(ON)
DS(ON)
g
max
typ.
typ. @ V
typ. @ V
S
D
Key Parameters
Typ.
–––
–––
–––
GS
GS
= -10V
= -4.5V
-40 to + 175
Refer to page 10 for package outline
Max.
0.53
–––
IRLR9343
-55
±20
-20
-14
-60
79
39
D-Pak
IRLU9343-701
I-Pak Leadform 701
IRLU9343-701
Max.
110
1.9
50
150
175
-55
93
31
IRLR9343
IRLU9343
IRLU9343
I-Pak
Units
Units
W/°C
°C/W
°C
m:
m:
W
V
A
N
nC
°C
V
1
4/1/04

Related parts for irlr9343

irlr9343 Summary of contents

Page 1

... GS Parameter Typ. IRLR9343 IRLU9343 IRLU9343-701 - -10V -4.5V 150 175 °C D-Pak I-Pak IRLR9343 IRLU9343 I-Pak Leadform 701 IRLU9343-701 Refer to page 10 for package outline Max. Units -55 V ±20 -20 A -14 - 0.53 W/°C - 175 °C ––– N Max ...

Page 2

Electrical Characteristics @ T Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient GS(th Drain-to-Source Leakage Current ...

Page 3

TOP 10 BOTTOM 1 -2.5V ≤ 60µs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 25° 175°C 10.0 1.0 V ...

Page 4

175°C 10 25°C 1.0 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage ...

Page 5

125°C 100 25°C 0 4.0 6.0 8 Gate-to-Source Voltage (V) Fig 12. On-Resistance Vs. Gate Voltage 1000 Duty Cycle = Single Pulse 100 0.01 10 0.05 ...

Page 6

D.U.T + ƒ • • - • + ‚ -  • • • SD • Fig 16 D.U DRIVER -20V GS 0.01 Ω DUT 0 ...

Page 7

A - 5.46 (.215) 5.21 (.205) 4 1.02 (.040 1.64 (.025) 1.52 (.060) 1.15 (.045) 3X 1.14 (.045) 2X 0.76 (.030) 2.28 (.090) 4.57 (.180) Notes : This part marking information applies ...

Page 8

A - 5.46 (.215) 5.21 (.205) 4 6.22 (.245) 1.52 (.060) 5.97 (.235) 1.15 (.045 2.28 (.090) 9.65 (.380) 1.91 (.075) 8.89 (.350) 1.14 (.045) 3X 0.89 (.035) 0.76 ...

Page 9

TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS ...

Page 10

Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting T = 25° 1.24mH 25Ω -14A ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%. „ This only ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

Related keywords