sud50n02-11p Vishay, sud50n02-11p Datasheet - Page 3

• Manufacturer Part Number: sud50n02-11p
• Description: N-channel 20-v D-s 175 ?mosfet
• Manufacturer: Vishay

Document Number: 72094
S-22453—Rev. A, 20-Jan-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
1600
1200
800
400
1.8
1.6
1.4
1.2
1.0
0.8
0.6
60
50
40
30
20
10
0
0
-50
0
0
On-Resistance vs. Junction Temperature
V
I
-25
D
GS
= 30 A
C
= 10 V
rss
10
4
V
T
0
DS
J
- Junction Temperature (_C)
- Drain-to-Source Voltage (V)
I
Transconductance
D
25
- Drain Current (A)
Capacitance
20
8
50
C
C
oss
iss
75
30
12
100
T
C
125
= -55_C
40
16
125_C
25_C
150
175
New Product
50
20
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0.000
100
10
10
1
8
6
4
2
0
0
0
0
V
V
I
GS
D
Source-Drain Diode Forward Voltage
DS
= 50 A
= 4.5 V
T
On-Resistance vs. Drain Current
= 10 V
4
J
0.3
V
20
= 150_C
SD
Q
g
- Source-to-Drain Voltage (V)
I
D
- Total Gate Charge (nC)
8
- Drain Current (A)
Gate Charge
40
0.6
SUD50N02-11P
Vishay Siliconix
12
60
0.9
T
16
V
J
GS
= 25_C
= 10 V
www.vishay.com
80
1.2
20
100
24
1.5
3