sud50np04-77p Vishay, sud50np04-77p Datasheet
sud50np04-77p
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sud50np04-77p Summary of contents
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... Top View Drain Connected to Tab Ordering Information: SUD50NP04-77P-T4-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Source-Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current ...
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... SUD50NP04-77P Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-State Resistance b Forward Transconductance a Dynamic Input Capacitance Output Capacitance ...
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... ° N-Channel di/dt = 100 A/µ ° P-Channel di/ 100 A/µ SUD50NP04-77P Vishay Siliconix a Min. Typ. Max Ω ...
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... SUD50NP04-77P Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.0 0.5 1 Drain-to-Source Voltage (V) DS Output Characteristics 0.060 0.052 0.044 0.036 0.028 0.020 Drain Current (A) D On-Resistance vs. Drain Current ...
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... Single Pulse Power, Junction-to-Case Document Number: 73989 S-80109-Rev. B, 21-Jan-08 New Product 0.20 0. °C J 0.12 0.08 0.04 0.8 1.0 1.2 100 75 100 125 150 100 0.01 0.1 1 SUD50NP04-77P Vishay Siliconix 125 ° ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage ...
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... SUD50NP04-77P Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 Limited DS(on 0 °C C Single Pulse 0.01 0.01 0 Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area, Junction-to-Case Package Limited 100 T - Case Temperature (°C) ...
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... Document Number: 73989 S-80109-Rev. B, 21-Jan-08 New Product - Square Wave Pulse Duration ( Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SUD50NP04-77P Vishay Siliconix Notes Duty Cycle Per Unit Base = °C/W ...
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... SUD50NP04-77P Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.0 0.5 1 Drain-to-Source Voltage (V) DS Output Characteristics 0.050 0.044 0.038 0.032 0.026 0.020 Drain Current (A) D On-Resistance vs. Drain Current ...
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... °C J 0.06 0.03 1.2 1.5 120 96 = 250 µ 100 125 150 100 0.1 0. SUD50NP04-77P Vishay Siliconix 125 ° ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 0 0.001 0.01 0 Time (s) Single Pulse Power, Junction-to-Ambient ...
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... SUD50NP04-77P Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 Limited DS(on 0 °C C Single Pulse 0.01 0.01 0 Drain-to-Source Voltage ( > minimum V at which Safe Operating Area, Junction-to-Case Package Limited 100 T - Case Temperature (°C) ...
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... Document Number: 73989 S-80109-Rev. B, 21-Jan-08 New Product - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient -2 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SUD50NP04-77P Vishay Siliconix Notes Duty Cycle Per Unit Base = ° ...
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... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...