ssa-005-2 Bedford Opto Technology Ltd., ssa-005-2 Datasheet - Page 2

• Manufacturer Part Number: ssa-005-2
• Description: Miniature Ir Array
• Manufacturer: Bedford Opto Technology Ltd.

INFRARED DIODES
IR-Emitting Diodes in Miniature (T-3/4) Package
PHOTO
DETECTORS
SOLDERING TEMPERATURE (3secs max 2mm from body)
ALL TYPES
PARAMETER
Viewing Angle
Peak Wavelength
Power Dissipation
Thermal Resistance Junction/Ambient
Forward Current
Rise Time
Fall Time
Junction Temperature
Storage Temperature Range
Radiant Intensity
PARAMETER
Viewing Angle
Peak Wavelength
Thermal Resistance Junction/Ambient
Forward Current
Rise Time
Fall Time
Junction Temperature
Storage Temperature Range
Collector Light Current BPW 16N
Collector Emitter Voltage
Collector Dark Current
1BIGGAR BUSINESS PARK, BIGGAR,LANARKSHIRE, ML12 6NR
Silicon -NPN - Phototransistors
Tel: [phone] Fax: [phone]
CQY 37N
BPW 17N
Website: bot.co.uk E-mail: [e-mail]
CQY 36N
BPW 16N
BEDFORD OPTO TECHNOLOGY LTD
CQY 37N
BPW 17N
CQY 36N
I
I
Vs=5V, Ic=5mA, R
Vs=5V, Ic=5mA, R
F
F
Ee=1mW/cm
=1.5A, tp/T=0.01, tp<10μs
=1.5A, tp/T=0.01, tp<10μs
I
V
F
CONDITIONS
CONDITIONS
=50mA, tp<20ns
CE
Vce=5V
= 20V, E = 0
2
, λ=950nm,
L
L
=100Ω
=100Ω
260
SYMBOL
SYMBOL
O
C max
R
V
R
Tstg
I
Tstg
λp
Pv
Tr
Tf
Tj
Ica
CEO
thJA
I
Ie
λp
ϕ
thJA
Tr
Tf
Tj
CEO
I
ϕ
F
F
Min = 0.7mW/sr
Min = 2.2mW/sr
Typ = 1.5mW/sr
-25…+100°C
Min = 0.07mA
Typ = 0.14mA
-55…+100°C
Min = 0.5mA
Typ = 1nA
VALUE
450K/W
170mW
100mA
VALUE
950nm
450K/W
100°C
400ns
450ns
100mA
825nm
+55°
100°C
4.8μs
5.0μs
+40°
32V
SSA-005-2