si1905bdh Vishay, si1905bdh Datasheet - Page 4

• Manufacturer Part Number: si1905bdh
• Description: Dual P-channel 1.8-v G-s Mosfet
• Manufacturer: Vishay

Si1905BDH
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
0.01
0.8
0.7
0.6
0.5
0.4
0.1
10
1
- 50
0
- 25
Source-Drain Diode Forward Voltage
0.2
I
D
V
T
SD
= 250 µA
0
J
= 150 °C
- Source-to-Drain Voltage (V)
Threshold Voltage
T
0.4
J
25
- Temperature (°C)
0.6
50
T
75
J
0.001
0.8
= 25 °C
0.01
0.1
10
1
100
0.1
* V
Safe Operating Area, Junction-to-Ambient
1.0
125
GS
Single Pulse
T
A
New Product
= 25 °C
V
Limited by r
150
minimum V
1.2
DS
- Drain-to-Source Voltage (V)
GS
DS(on)
at which r
1
*
DS(on)
2.0
1.5
1.0
0.5
5
4
3
2
1
0
0
10
0
is specified
-3
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
10
-2
1
100 ms
1 s
10 s
DC
10
V
GS
10
- Gate-to-Source Voltage (V)
-1
2
Time (s)
S-72340-Rev. B, 05-Nov-07
1
Document Number: 74638
3
10
I
D
T
= 0.57 A
T
A
A
= 125 °C
4
= 25 °C
100
600
5