sum110n04-02l Vishay, sum110n04-02l Datasheet

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sum110n04-02l

Manufacturer Part Number
sum110n04-02l
Description
N-channel 40-v D-s 175c Mosfet
Manufacturer
Vishay
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
SUM110N04-02L
Manufacturer:
VISHAY
Quantity:
12 500
Notes:
a. Package limited.
b. Duty cycle ≤ 1 %.
c. See SOA curve for voltage derating.
d. When Mounted on 1" square PCB (FR-4 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 70763
S-80108-Rev. D, 21-Jan-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case (Drain)
V
(BR)DSS
40
Ordering Information: SUM110N04-02L
(V)
0.0038 at V
0.0023 at V
G
Top View
TO-263
D
SUM110N04-02L-E3 (Lead (Pb)-free)
J
b
r
b
N-Channel 40-V (D-S) 175 °C MOSFET
DS(on)
= 175 °C)
S
GS
GS
(Ω)
= 4.5 V
= 10 V
C
= 25 °C, unless otherwise noted
T
PCB Mount
I
L = 0.1 mH
T
T
T
110
D
C
C
C
A
(A)
= 125 °C
= 25 °C
= 25 °C
= 25 °C
a
d
FEATURES
• TrenchFET
• New Package with Low Thermal Resistance
Symbol
Symbol
T
R
J
R
V
V
E
I
I
P
, T
G
DM
I
AR
thJA
thJC
GS
DS
AR
D
D
®
stg
N-Channel MOSFET
Power MOSFET
D
S
- 55 to 175
SUM110N04-02L
437.5
Limit
Limit
± 20
110
110
3.75
440
280
0.4
40
75
40
a
a
c
Vishay Siliconix
www.vishay.com
°C/W
Unit
Unit
RoHS*
COMPLIANT
mJ
°C
W
V
A
Available
1

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sum110n04-02l Summary of contents

Page 1

... DS(on) 0.0023 0.0038 4 TO-263 Top View Ordering Information: SUM110N04-02L SUM110N04-02L-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Avalanche Current b Repetitive Avalanche Energy b Maximum Power Dissipation ...

Page 2

... SUM110N04-02L Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...

Page 3

... Document Number: 70763 S-80108-Rev. D, 21-Jan- 0.004 ° °C 0.003 125 °C 0.002 0.001 0.000 80 100 120 SUM110N04-02L Vishay Siliconix 250 200 150 100 T = 125 ° ° – Gate-to-Source Voltage ( Transfer Characteristics ...

Page 4

... SUM110N04-02L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1.6 1.2 0.8 0.4 0 – Junction Temperature (°C) J On-Resistance vs. Junction Temperature 1000 100 ( 150 ° 0.1 0.00001 0.0001 0.001 t (s) in Avalanche Current vs. Time www.vishay.com 4 75 100 ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70763. Document Number: 70763 S-80108-Rev. D, 21-Jan-08 1000 100 125 150 175 - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SUM110N04-02L Vishay Siliconix 100 Limited by r DS(on °C C Single Pulse 0.1 0 – ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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