si3216-x-gm Silicon Laboratories, si3216-x-gm Datasheet - Page 16

• Manufacturer Part Number: si3216-x-gm
• Description: Proslic Programmable Wideband Slic/codec With Ringing/battery Voltage Generation
• Manufacturer: Silicon Laboratories

Si3216
Table 6. Monitor ADC Characteristics
(V
16
Table 8. Si321x DC Characteristics, V
(V
Table 7. Si321x DC Characteristics, V
(V
Parameter
Differential Nonlinearity
(6-bit resolution)
Integral Nonlinearity
(6-bit resolution)
Gain Error (voltage)
Gain Error (current)
Parameter
High Level Input Voltage
Low Level Input Voltage
High Level Output Voltage
Low Level Output Voltage
Input Leakage Current
Parameter
High Level Input Voltage
Low Level Input Voltage
High Level Output Voltage
Low Level Output Voltage
Input Leakage Current
DDA
DDA
DDA
, V
, V
, V
DDD
DDD
DDD
= 3.13 to 5.25 V, T
= 3.13 to 3.47 V, T
= 4.75 to 5.25 V, T
A
Symbol
A
A
Symbol
DNLE
Symbol
= 0 to 70 °C for K-Grade, –40 to 85 °C for B-Grade)
INLE
= 0 to 70 °C for K-Grade, –40 to 85 °C for B-Grade)
= 0 to 70 °C for K-Grade, –40 to 85 °C for B-Grade)
V
V
V
V
V
V
I
V
OH
V
OL
IH
L
IL
I
OH
OL
L
IH
IL
DIO1,DIO2,SDITHRU:I
DIO1,DIO2,DOUT,SDITHRU:
DIO1,DIO2,SDITHRU:I
DIO1,DIO2,DOUT,SDITHRU:
SDO,INT,DTX:I
DDA
DDA
SDO, DTX:I
DOUT: I
SDO,INT,DTX:I
Test Condition
SDO, DTX:I
Test Condition
Preliminary Rev. 0.91
DOUT: I
Test Condition
= V
= V
I
O
I
= 4 mA
DDD
O
O
DDD
= 2 mA
= –40 mA
O
O
= –40 mA
= –8 mA
O
O
= 3.3 V
= 5.0 V
= –4 mA
= 8 mA
O
O
= 4 mA
= –4 mA
O
= –2 mA
0.7 x V
V
V
–1/2
Min
DDD
DDD
–1
—
—
0.7 x V
V
V
Min
–10
DDD
DDD
—
—
Min
– 0.6
– 0.8
–10
—
—
DDD
– 0.6
– 0.8
DDD
Typ
—
—
—
—
Typ
—
—
—
—
—
—
Typ
—
—
—
—
—
—
0.3 x V
0.3 x V
Max
1/2
10
20
1
Max
Max
0.4
—
—
—
10
0.4
10
—
—
—
DDD
DDD
Unit
LSB
LSB
%
%
Unit
Unit
µA
µ A
V
V
V
V
V
V
V
V
V
V