si3865dv Vishay, si3865dv Datasheet

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si3865dv

Manufacturer Part Number
si3865dv
Description
Iload Switch With Level-shift
Manufacturer
Vishay
Datasheet

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DESCRIPTION
The Si3865DV includes a p- and n-channel MOSFET in a
single TSOP-6 package. The low on-resistance p-channel
TrenchFET
n-channel, with an external resistor, can be used as a
Document Number: 70867
S-60515—Rev. A, 05-Apr-99
PRODUCT SUMMARY
FEATURES
D 80-mW Low r
D
D
APPLICATION CIRCUITS
COMPONENTS
*Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on.
ON/OFF
R1
R2
C1
V
1.8 to 8
1.5 to 8
1 8
1.8 to 8
DS2
V
R2
IN
(V)
8
C
R1
-V Input
-V Logic Level Control
Optional Slew-Rate Control
Optional Slew-Rate Control
i
R
Pull-Up Resistor
is tailored for use as a load switch.
DS(on)
4
6
5
Si3865DV
Q2
Q1
TrenchFETt
0.080 @ V
0.175 @ V
0.110 @ V
r
DS(on)
1
R2
IN
IN
IN
(W)
= 4.5 V
= 2.5 V
= 1.8 V
Load Switch with Level-Shift
2, 3
6
Typical 10 kW to 1 mW*
Typical 0 to 100 kW*
C
Typical 1000 pF
o
C1
I
V
GND
New Product
D
"2.7
"2.2
"1.7
LOAD
OUT
(A)
The
D Low Profile, Small Footprint TSOP-6 Package
D 3000-V ESD Protection On Input Switch, V
D Adjustable Slew-Rate
level-shift to drive the p-channel load-switch. The n-channel
MOSFET has internal ESD protection and can be driven by
logic signals as low as 1.5-V. The Si3865DV operates on
supply lines from 1.8 to 8-V, and can drive loads up to 2.7 A.
The Si3865DV is ideally suited for high-side load switching in
portable applications. The integrated n-channel level-shift
device saves space by reducing external components. The
slew rate is set externally so that rise-times can be tailored to
different load types.
40
32
24
16
8
0
0
Note: For R2 switching variations with other V
combinations See Typical Characteristics
R2 @ V
t
2
d(off)
1.8 V Rated
Switching Variation
t
IN
r
= 2.5 V, R1 = 20 kW
R2 (kW)
www.vishay.com S FaxBack 408-970-5600
4
t
f
Vishay Siliconix
I
V
C
C
L
ON/OFF
i
o
= 1 A
= 10 mF
= 1 mF
6
= 3 V
Si3865DV
t
d(on)
ON/OFF
IN
/R1
8
2-1

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si3865dv Summary of contents

Page 1

... GND Note: For R2 switching variations with other V combinations See Typical Characteristics The Si3865DV is ideally suited for high-side load switching in portable applications. The integrated n-channel level-shift device saves space by reducing external components. The slew rate is set externally so that rise-times can be tailored to different load types. ...

Page 2

... On-State (p-channel) Drain-Current On-State (p-channel) Drain-Current Notes a. Surface Mounted on FR4 Board 25_C. IN ON/OFF A c. Pulse test: pulse width v300 ms, duty cycle v2%. www.vishay.com S FaxBack 408-970-5600 2-2 New Product Si3865DV ON/OFF R2 = 25_C UNLESS OTHERWISE NOTED) A Symbol ON/OFF a, b Continuous ...

Page 3

... S-60515—Rev. A, 05-Apr-99 New Product 0.5 0.4 0.3 0 25_C J 0 1.8 0.40 0.32 0.24 0. 25_C J 0.08 0 1.6 2.0 0.4 0 0.1 0 100 125 150 Si3865DV Vishay Siliconix V vs 2.5 V DROP 1 ON/OFF T = 125_C 25_C – DROP ...

Page 4

... Si3865DV Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized On-Resistance vs. Junction Temperature 1 1 ON/OFF 1 1.0 0.8 0.6 –50 – – Junction Temperature (_C) J Switching Variation 2 ON/OFF d(off) ...

Page 5

... ON/OFF d(on (kW) –2 – Square Wave Pulse Dureation (sec) Si3865DV Vishay Siliconix 60 Notes Duty Cycle Per Unit Base = R = 150_C/W thJA ( – thJA 4 ...

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