si3911dv Vishay, si3911dv Datasheet - Page 3

• Manufacturer Part Number: si3911dv
• Description: Dual P-channel 20-v D-s Mosfet
• Manufacturer: Vishay

Document Number: 71380
S-20275—Rev. B, 18-Mar-02
0.75
0.60
0.45
0.30
0.15
0.00
0.1
10
1
5
4
3
2
1
0
0.00
0
0
V
GS
= 1.8 V
V
I
D
Source-Drain Diode Forward Voltage
DS
= 2.2 A
On-Resistance vs. Drain Current
V
T
= 10 V
0.3
1
SD
J
= 150_C
2
Q
– Source-to-Drain Voltage (V)
g
I
D
– Total Gate Charge (nC)
V
– Drain Current (A)
GS
Gate Charge
0.6
2
= 2.5 V
4
0.9
3
T
J
= 25_C
V
GS
6
1.2
= 4.5 V
4
_
1.5
8
5
New Product
600
500
400
300
200
100
0.5
0.4
0.3
0.2
0.1
0.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
–50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
–25
V
I
D
GS
= 2.2 A
V
V
4
= 4.5 V
1
DS
T
GS
J
0
– Junction Temperature (_C)
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
C
oss
Capacitance
25
8
2
Vishay Siliconix
C
I
iss
50
D
= 2.2 A
12
3
75
C
Si3911DV
rss
100
www.vishay.com
16
4
125
150
20
5
3