si5419du Vishay, si5419du Datasheet - Page 3

• Manufacturer Part Number: si5419du
• Description: P-channel 30-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 69001
S-82656-Rev. A, 03-Nov-08
0.10
0.08
0.06
0.04
0.02
40
32
24
16
10
8
0
0
8
6
4
2
0
0.0
0
0
I
D
0.5
= 9.9 A
On-Resistance vs. Drain Current
5
V
DS
10
V
Output Characteristics
Q
DS
- Drain-to-Source Voltage (V)
g
1.0
10
I
- Total Gate Charge (nC)
D
V
= 15 V
V
GS
Gate Charge
- Drain Current (A)
GS
V
= 2 V
GS
= 4.5 V
1.5
20
15
= 10 thru 5 V
V
GS
2.0
= 10 V
20
V
V
30
GS
DS
V
= 4 V
2.5
= 24 V
GS
25
= 3 V
3.0
40
30
2100
1800
1500
1200
900
600
300
1.6
1.4
1.2
1.0
0.8
0.6
20
16
12
8
4
0
0
- 50
0
0
On-Resistance vs. Junction Temperature
C
I
D
- 25
rss
= 6.6 A
5
C
V
C
V
DS
iss
oss
T
1
GS
Transfer Characteristics
0
J
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
10
25
Capacitance
T
C
= 125 °C
V
15
50
T
2
GS
Vishay Siliconix
C
= 10 V
= 25 °C
75
Si5419DU
20
100
www.vishay.com
3
T
V
C
GS
25
= - 55 °C
125
= 4.5 V
150
30
4
3