si5858du Vishay, si5858du Datasheet - Page 5

• Manufacturer Part Number: si5858du
• Description: N-channel 20-v D-s Mosfet With Schottky Diode
• Manufacturer: Vishay

Document Number: 73460
S–51931—Rev. A, 12-Sep-05
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
20
10
1
0.0
–50
–25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
– Source-to-Drain Voltage (V)
T
0.4
Threshold Voltage
J
– Temperature (_C)
25
0.6
50
T
J
= 150_C
I
D
75
= 250 mA
0.8
0.01
T
100
100
0.1
J
10
= 25_C
1
0.1
1.0
I
D(on)
_
125
Safe Operating Area, Junction-to-Ambient
*V
GS
*Limited by r
limited
u minimum V
1.2
150
V
New Product
DS
– Drain-to-Source Voltage (V)
DS(on)
Single Pulse
1
T
A
BVDSS limited
= 25_C
GS
at which r
I
DM
limited
DS(on)
10
0.08
0.07
0.06
0.05
0.04
0.03
is specified
40
30
20
10
0
0.001
1 s
10 s
0
100 ms
100 ms
10 ms
dc
1 ms
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.01
100
1
V
25_C
GS
– Gate-to-Source Voltage (V)
0.1
2
Time (sec)
Vishay Siliconix
1
125_C
3
Si5858DU
10
I
www.vishay.com
D
= 4.4 A
4
100
600
5
5