2sj537 TOSHIBA Semiconductor CORPORATION, 2sj537 Datasheet - Page 2

• Manufacturer Part Number: 2sj537
• Description: Toshiba Field Effect Transistor Silicon P Channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Source−Drain Ratings and Characteristics
Marking
Gate leakage current
Drain cut−off current
Drain−source breakdown
voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge (Gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) charge
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Characteristics
Characteristics
J537
Rise time
Turn−on time
Fall time
Turn−off time
(Note 1)
(Note 1)
V
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
(Ta = 25°C)
R
Symbol
Symbol
(BR) DSS
DS (ON)
V
I
I
I
C
|Y
C
C
Q
Q
GSS
DRP
DSS
I
V
t
Q
t
DSF
DR
off
oss
t
on
rss
t
iss
gs
gd
th
fs
r
f
g
|
V
V
I
V
V
V
V
V
V
I
I
D
D
DR
GS
DS
DS
GS
GS
DS
DS
DD
= −10 mA, V
= −5 A
= −5 A, V
= −50 V, V
= −10 V, I
= −10 V, I
= −10 V, V
≈ −40 V, V
= ±16 V, V
= −4 V, I
= −10 V, I
2
GS
D
(Ta = 25°C)
D
D
D
Test Condition
Test Condition
GS
DS
GS
= −1.3 A
GS
GS
= −1 mA
= −2.5 A
= −2.5 A
= 0 V
= 0 V
= 0 V
= 0 V
= 0 V, f = 1 MHz
= −10 V,
—
—
−0.8
−50
Min
Min
1.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
0.27
0.16
Typ.
470
210
120
3.5
—
—
—
—
60
25
35
20
18
13
—
—
—
5
2006-11-16
−100
−2.0
0.34
0.19
Max
Max
±10
−15
1.5
−5
—
—
—
—
—
—
—
—
—
—
—
—
2SJ537
Unit
Unit
μA
μA
nC
pF
ns
V
V
Ω
A
A
V
S