2sj402 TOSHIBA Semiconductor CORPORATION, 2sj402 Datasheet

2sj402

Manufacturer Part Number

2sj402

Description

P Channel Mos Type High Speed, High Current Switching, Dc-dc Converter, Relay Drive And Motor Drive Applications

Manufacturer

TOSHIBA Semiconductor CORPORATION

Datasheet

1.2SJ402.pdf (6 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

2SJ402

Manufacturer:

TOSHIBA

Quantity:

Company:

Meier Automation Equipment Co., Limited

Part Number:

2SJ402

Manufacturer:

TOSHIBA/东芝

Quantity:

20 000

Current page: 1 of 6
Download datasheet (714Kb)

DC−DC Converter, Relay Drive and Motor Drive

Applications

Absolute Maximum Ratings

Thermal Characteristics

4-V gate drive

Low drain−source ON resistance

High forward transfer admittance

Low leakage current : I

Enhancement mode

Drain−source voltage

Drain−gate voltage (R

Gate−source voltage

Drain current

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

Avalanche current

Repetitive avalenche energy (Note 3)

Channel temperature

Storage temperature range

Note:

Thermal resistance, channel to case

Thermal resistance, channel to

ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: V

Note 3: Repetitive rating: pulse width limited by maximum channel

This transistor is an electrostatic-sensitive device. Please handle with caution.

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage,

etc.) are within the absolute maximum ratings. Please design the

appropriate reliability upon reviewing the Toshiba Semiconductor

Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

temperature

Characteristics

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L

= −30 A

= −50 V, T

Pulse (Note 1)

= 20 kΩ)

: V

DSS

(Note 1)

(Note 2)

= 25°C (initial), L = 747 μH, R

= −0.8~−2.0 V (V

= −100 μA (max) (V

(Ta = 25°C)

Symbol

th (ch−c)

th (ch−a)

: R

: |Y

DGR

GSS

DSS

stg

DS (ON)

2SJ402

| = 23 S (typ.)

= −10 V, I

= 29 mΩ (typ.)

−55~150

Rating

= −60 V)

−120

Max

1.25

83.3

−60

±20

−30

100

936

−30

150

= 25 Ω,

= −1 mA)

°C / W

Unit

°C

Weight: 1.5 g (typ.)

JEDEC

JEITA

TOSHIBA

JEDEC

JEITA

TOSHIBA

−π−MOSV)

2-10S1B

2-10S2B

2006-11-16

―

2SJ402

Unit: mm

Related parts for 2sj402

2sj402 Summary of contents

Page 1

... AR T 150 ° −55~150 °C stg Symbol Max Unit R 1.25 ° (ch−c) R 83.3 ° (ch− Ω 2SJ402 2 −π−MOSV) Unit: mm JEDEC ― JEITA ― TOSHIBA 2-10S1B Weight: 1.5 g (typ.) JEDEC ― JEITA ― TOSHIBA 2-10S2B Weight: 1.5 g (typ.) 2006-11-16 ...

Page 2

... DR I — DRP − DSF − μS DR Qrr 2 2SJ402 Min Typ. Max — — ±10 — — −100 −60 — — −0.8 — −2.0 — — — ...

Page 3

... 3 2SJ402 2006-11-16 ...

Page 4

... 4 2SJ402 2006-11-16 ...

Page 5

... 5 2SJ402 2006-11-16 ...

Page 6

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2SJ402 20070701-EN 2006-11-16 ...

Related keywords

2sj402 datasheet
2sj402 data sheet
2sj402 pdf datasheet
2sj402 component
2sj402 part
2sj402 distributor
2sj402 RoHS
2sj402 datasheet download