2sj327 Renesas Electronics Corporation., 2sj327 Datasheet

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2sj327

Manufacturer Part Number
2sj327
Description
Switching P-channel Power Mos Fet Industrial Use
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Document No. D18314EJ3V0DS00 (3rd edition)
Date Published January 2007 NS CP(K)
Printed in Japan
DESCRIPTION
solenoid, motor and lamp driver.
FEATURES
• Low On-state Resistance
• Low C
• Built-in G-S Gate Protection Diode
ABSOLUTE MAXIMUM RATINGS (T
EQUIVALENT CIRCUIT
Note PW ≤ 10
The 2SJ327 is P-channel MOS Field Effect Transistor designed for
Drain to Source Voltage
Gate to Source Voltage (AC)
Gate to Source Voltage (DC)
Drain Current (DC)
Drain Current (pulse)
Total Power Dissipation (T
Total Power Dissipation (T
Channel Temperature
Storage Temperature
R
R
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
DS(on)
DS(on)
iss
: C
= 0.13 Ω TYP. (V
= 0.21 Ω TYP. (V
iss
= 750 pF TYP.
μ
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
s, Duty Cycle ≤ 1%
Note
C
A
= 25°C)
= 25°C)
GS
GS
= −10 V, I
= −4 V, I
V
V
I
I
D(pulse)
P-CHANNEL POWER MOS FET
V
GSS(AC)
GSS(DC)
D(DC)
P
P
T
T
DSS
stg
T1
T2
ch
D
D
The mark <R> shows major revised points.
= −1.6 A)
= −2.0 A)
A
= 25°C)
−55 to +150
−20, +10
DATA SHEET
m4.0
−60
m20
m16
150
1.0
20
SWITCHING
MOS FIELD EFFECT TRANSISTOR
°C
°C
W
W
V
V
V
A
A
2SJ327,327-Z
<R>
Note The depth of notch at the top of the fin is
PACKAGE DRAWINGS (Unit: mm)
2.3 ±0.3
1.1 ±0.2
from 0 to 0.2 mm.
TO-252 (MP-3Z)
TO-251 (MP-3)
1
6.5 ±0.2
5.0 ±0.2
6.5 ±0.2
5.0 ±0.2
4.4 ±0.2
1 2 3
2.3
2
2.3
4
4
3
2.3 ±0.3
Note
0.5 ±0.1
Electrode Connection
1. Gate
2. Drain
3. Source
4. Drain Fin
2.3 ±0.2
2.3 ±0.2
0.15 ±0.15
0.5 ±0.1
0.5 ±0.1
0.5 ±0.1
Note
1993, 2006

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2sj327 Summary of contents

Page 1

... DESCRIPTION The 2SJ327 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low On-state Resistance R = 0.13 Ω TYP − DS(on 0.21 Ω TYP − DS(on) GS • Low 750 pF TYP. iss iss • Built-in G-S Gate Protection Diode ...

Page 2

... Data Sheet D18314EJ3V0DS 2SJ327,327-Z ...

Page 3

... Data Sheet D18314EJ3V0DS 2SJ327,327-Z 3 ...

Page 4

... Data Sheet D18314EJ3V0DS 2SJ327,327-Z ...

Page 5

... Data Sheet D18314EJ3V0DS 2SJ327,327-Z 5 ...

Page 6

... NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). 2SJ327,327-Z M8E 02. 11-1 ...

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