2sj331 Renesas Electronics Corporation., 2sj331 Datasheet
2sj331
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2sj331 Summary of contents
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... P-CHANNEL POWER MOS FET = − − 25°C) A − DSS V V m20 GSS(AC) −20, + GSS(DC m30 D(DC m120 D(pulse) P 150 3 °C T 150 ch −55 to +150 °C T stg The mark <R> shows major revised points. 2SJ331 1993, 2006 ...
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... Data Sheet D18444EJ2V0DS 2SJ331 ...
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... Data Sheet D18444EJ2V0DS 2SJ331 3 ...
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... Data Sheet D18444EJ2V0DS 2SJ331 ...
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... Data Sheet D18444EJ2V0DS 2SJ331 5 ...
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... The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 6 4.7 MAX. φ 3.2±0.2 1.5 TYP. 1.0±0.2 0.6±0.1 2.8±0.1 1.Gate 2.Drain 3.Source 4.Fin (Drain) Data Sheet D18444EJ2V0DS 2SJ331 ...
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... NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). 2SJ331 M8E 02. 11-1 ...