2sj217 Renesas Electronics Corporation., 2sj217 Datasheet - Page 4

• Manufacturer Part Number: 2sj217
• Description: Silicon P Channel Mos Fet
• Manufacturer: Renesas Electronics Corporation.

2SJ217
Rev.2.00 Sep 07, 2005 page 4 of 6
5000
2000
1000
–100
0.08
0.06
0.04
0.02
500
200
100
–20
–40
–60
–80
0.1
50
–0.5
0
–40
0
Static Drain to Source on State Resistance
0
Reverse Drain Current
di / dt = 50 A / µs, V
Ta = 25°C, Pulse Test
V
I
V
D
DS
Case Temperature
Dynamic Input Characteristics
GS
= –45 A
–10 V
Body-Drain Diode Reverse
–1
Gate Charge
40
= –4 V
0
V
DD
–2
Recovery Time
vs. Temperature
= –10 V
V
DD
80
40
–25 V
–50 V
–10 A, –20 A
= –10 V
–10 A
–5
–25 V
–50 V
GS
120
80
Qg (nc)
–10 –20
= 0
I
V
D
Tc (°C)
GS
Pulse Test
= –20 A
I
D
I
120
DR
160
= –50 A
(A)
–50
200
160
–12
–16
–20
–4
–8
0
10000
5000
2000
1000
1000
200
100
500
200
100
500
200
100
50
20
10
50
20
10
5
2
–0.5
–0.5 –1
0
Drain to Source Voltage V
V
PW = 2 µs, duty ≤ 1 %
Forward Transfer Admittance vs.
V
f = 1 MHz
GS
GS
–1
= –10 V, V
Switching Characteristics
–10
Drain to Source Voltage
= 0
Typical Capacitance vs.
Drain Current
Drain Current I
–2
–2
Drain Current
t r
–20
75°C
DD
t d(on)
Tc = –25°C
25°C
–5
t f
–5
= –30 V
t d(off)
–30
–10 –20
–10 –20
D
I
V
Pulse Test
D
Coss
Ciss
Crss
DS
(A)
(A)
–40
= –10 V
DS
(V)
–50
–50
–50