tvr10220-q Thinking Electronic Industrial Co., Ltd., tvr10220-q Datasheet - Page 10
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tvr10220-q
Manufacturer Part Number
tvr10220-q
Description
Metal Oxide Varistor: :: :tvr-q Series
Manufacturer
Thinking Electronic Industrial Co., Ltd.
Datasheet
1.TVR10220-Q.pdf
(13 pages)
Metal Oxide Varistor: : : : TVR-Q Series
Disc Type Varistor for Automotive Applications
THINKING ELECTRONIC INDUSTRIAL Co., LTD.
All specifications are subject to change without notice.
Characterization
Thermal Shock
Soldering Heat
Resistance to
Flammability
Solderability
Mechanical
Conduction
Jump Start
Transient
Electrical
Electrical
Vibration
Shock
Item
MIL-STD-202-213
Specifications
MIL-STD-202
MIL-STD-202
MIL-STD-202
Specification
Method 204
Method 210
Method 107
ISO-7637-1
J-STD-002
Standard
Standard
UL94
Peak value: 100g's Half sine Waveform
Normal duration (D): 6ms
3 shocks in per axis (±X, ±Y, ±Z), 3 times.
Acceleration: 5 g's
Sweep time: 20 min
Frequency range: 10Hz~2KHz~10Hz
3×12 cycles
No pre-heat of samples.
Temperature: 260 ±5° C, Time: 10 ±1 s
Immersion and emersion rate: 25mm/s ±6 mm/s
Number of heat cycles: 1
Lower test temp.: -55 +0/-3° C
Upper test temp.: 125 +3/-0° C
Maximum transfer time: 20 seconds.
Dwell time: 15 minutes. Air-Air.
Number of cycles : 300
Steam aging 8hr@93±3° C,
245±5°C, 5 +0/- 0.5sec
Varistor voltage and clamping voltage
V-0
Test pulses 5
Test voltage:
For TVR**220-Q, Vjump = 25 Vdc
For TVR**270-Q, Vjump = 30 Vdc
For TVR**390-Q, Vjump = 42 Vdc
For TVR**470-Q, Vjump = 50 Vdc
For TVR**680-Q, Vjump = 65Vdc
Duration Time: 5 minutes
Test conditions / Methods
10
www.thinking.com.tw
electrode is covered by new
UL certified coating material
Within the specified values
│△Vclamp/Vclamp│≦10%
│△Vclamp/Vclamp│≦10%
│△Vclamp/Vclamp│≦10%
│△Vclamp/Vclamp│≦10%
│△Vclamp/Vclamp│≦10%
│△V1mA/V1mA│≦10%
│△V1mA/V1mA│≦10%
│△V1mA/V1mA│≦10%
│△V1mA/V1mA│≦10%
At least 95% of terminal
│△V1mA/V1mA│≦10%
│△ V/V
No visible damage
No visible damage
No visible damage
No visible damage
No visible damage
No visible damage
Specifications
solder
1mA
│≦ 15%
2011.12