fll1200iu-2 Fujitsu Microelectronics, Inc., fll1200iu-2 Datasheet - Page 4

• Manufacturer Part Number: fll1200iu-2
• Description: L-band Medium & High Power Gaas Fet
• Manufacturer: Fujitsu Microelectronics, Inc.

For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: [phone]
FAX: [phone]
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS, LTD.
Compound Semiconductor Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:[phone]
FAX:[phone]
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0598M200
FLL1200IU-2
L-Band Medium & High Power GaAs FET
12-R0.5
4-R1.3
6
1
5
10.0±0.2
34.0±0.25
30.4±0.25
23.9±0.25
(0.393)
(1.339)
(1.181)
(0.941)
2
4
Case Style "IU"
(0.078)
2.0
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not put these products into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
• Observe government laws and company regulations when discarding this
4
3
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
1, 2: Gate
4, 5: Drain
4.5 Max.
Unit: mm (inches)
(0.177)
3: Source
6: Source
(0.004)
0.1
2.4±0.15
1.9±0.15
(0.094)
(0.075)
CAUTION