fll810iq-3c Eudyna Devices Inc, fll810iq-3c Datasheet - Page 4

• Manufacturer Part Number: fll810iq-3c
• Description: L-band High Power Gaas Fet
• Manufacturer: Eudyna Devices Inc

For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: [phone]
FAX: [phone]
www.fcsi.fujitsu.com
FUJITSU QUANTUM DEVICES EUROPE LTD.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:[phone]
FAX:[phone]
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 2001 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI05019M200
FLL810IQ-3C
L-Band High Power GaAs FET
4-R1.3±0.2
6
1
5
20.4±0.2
14.9±0.2
24±0.35
6.0
4
4-2.0
45°
Case Style "IQ"
2
3
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not put these products into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
• Observe government laws and company regulations when discarding this
4
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
4-0.1
1, 2: Gate
4, 5: Drain
Unit: mm (inches)
3: Source
CAUTION
2.4±0.15