mrf6s21050l Freescale Semiconductor, Inc, mrf6s21050l Datasheet - Page 2

• Manufacturer Part Number: mrf6s21050l
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

2
MRF6S21050LR3 MRF6S21050LSR3
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in
3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01%
Probability on CCDF.
Thermal Resistance, Junction to Case
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate- Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain- Source On - Voltage
Forward Transconductance
Reverse Transfer Capacitance
Power Gain
Drain Efficiency
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
3. Part is internally matched both on input and output.
Case Temperature 80°C, 50 W CW
Case Temperature 76°C, 12 W CW
(V
(V
(V
(V
(V
(V
(V
(V
the MTTF calculators by product.
Select Documentation/Application Notes - AN1955.
DS
DS
GS
DS
DS
GS
DS
DS
= 68 Vdc, V
= 28 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
DS
D
D
D
D
GS
GS
= 200 μAdc)
= 450 mAdc)
= 1.1 Adc)
= 1 Adc)
= 0 Vdc)
= 0 Vdc)
= 0 Vdc)
(3)
Characteristic
Test Methodology
Characteristic
(T
C
= 25°C unless otherwise noted)
GS
= 0 Vdc)
DD
= 28 Vdc, I
DQ
Symbol
V
V
V
ACPR
I
I
I
DS(on)
C
GS(th)
GS(Q)
G
IM3
GSS
= 450 mA, P
IRL
DSS
DSS
g
η
rss
fs
ps
D
Symbol
out
R
Min
—
—
—
—
—
—
15
26
—
—
—
θJC
1
2
= 11.5 W Avg., f1 = 2112.5 MHz,
0.21
0.75
27.7
Typ
- 37
- 40
- 15
2.9
5.3
16
—
—
—
2
1C (Minimum)
III (Minimum)
A (Minimum)
Value
Class
1.16
1.28
Freescale Semiconductor
(1,2)
Max
0.3
- 35
- 38
10
18
—
—
—
- 9
1
1
3
4
RF Device Data
°C/W
μAdc
μAdc
μAdc
Unit
Unit
Vdc
Vdc
Vdc
dBc
dBc
dB
dB
pF
%
S