mrf6s9045n Freescale Semiconductor, Inc, mrf6s9045n Datasheet - Page 10

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mrf6s9045n

Manufacturer Part Number
mrf6s9045n
Description
Rf Power Field Effect Transistors
Manufacturer
Freescale Semiconductor, Inc
Datasheet
MRF6S9045NR1 MRF6S9045NBR1
10
f = 850 MHz
f = 910 MHz
Figure 16. Series Equivalent Source and Load Impedance
Z
source
Z
Z
source
load
Input
Matching
Network
MHz
895
910
850
865
880
f
V
DD
= Test circuit impedance as measured from
= Test circuit impedance as measured
Z
= 28 Vdc, I
gate to ground.
from drain to ground.
o
= 5 Ω
Z
source
0.42 + j0.30
0.42 + j0.44
0.45 + j0.60
0.48 + j0.74
0.50 + j0.85
Z
load
Z
DQ
source
Ω
Device
Under
Test
= 350 mA, P
f = 850 MHz
f = 910 MHz
out
Z
= 10 W Avg.
load
3.05 + j1.27
3.16 + j1.33
3.31 + j1.33
3.43 + j1.20
3.35 + j1.05
Z
load
Ω
Output
Matching
Network
Freescale Semiconductor
RF Device Data

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