mrf1570n Freescale Semiconductor, Inc, mrf1570n Datasheet

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mrf1570n

Manufacturer Part Number
mrf1570n
Description
Rf Power Field Effect Transistors
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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Part Number:
mrf1570nT1
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mrf1570nT1
Manufacturer:
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© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
cies up to 470 MHz. The high gain and broadband performance of these
devices make them ideal for large - signal, common source amplifier applica-
tions in 12.5 volt mobile FM equipment.
• Specified Performance @ 470 MHz, 12.5 Volts
• Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 470 MHz, 2 dB Overdrive
Features
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Broadband - Full Power Across the Band: 135 - 175 MHz
• Broadband Demonstration Amplifier Information Available Upon Request
• 200_C Capable Plastic Package
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• Available in Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Table 4. Moisture Sensitivity Level
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
Human Body Model
Machine Model
Charge Device Model
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Designed for broadband commercial and industrial applications with frequen-
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
Derate above 25°C
Output Power — 70 Watts
Power Gain — 10 dB
Efficiency — 50%
the MTTF calculators by product.
Test Methodology
C
= 25°C
Test Conditions
Characteristic
Rating
400 - 470 MHz
Rating
1
Symbol
Symbol
V
R
V
T
Package Peak Temperature
P
DSS
T
θJC
stg
GS
D
J
CASE 1366 - 04, STYLE 1
CASE 1366A - 02, STYLE 1
TO - 272 - 8 WRAP
Document Number: MRF1570N
MRF1570NT1
MRF1570FNT1
MRF1570FNT1
MRF1570NT1
LATERAL N - CHANNEL
260
PLASTIC
TO - 272 - 8
470 MHz, 70 W, 12.5 V
RF POWER MOSFETs
PLASTIC
M2 (Minimum)
C2 (Minimum)
1 (Minimum)
MRF1570NT1 MRF1570FNT1
- 65 to +150
BROADBAND
+0.5, +40
Class
Value
Value
± 20
0.29
165
200
0.5
(1)
Rev. 8, 9/2006
W/°C
°C/W
Unit
Unit
Unit
Vdc
Vdc
°C
°C
°C
W
1

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mrf1570n Summary of contents

Page 1

... DSS stg T J Symbol R θJC Rating Package Peak Temperature 1 Document Number: MRF1570N Rev. 8, 9/2006 MRF1570NT1 MRF1570FNT1 470 MHz 12.5 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs CASE 1366 - 04, STYLE 272 - 8 WRAP PLASTIC MRF1570NT1 CASE 1366A - 02, STYLE 272 - 8 PLASTIC MRF1570FNT1 ...

Page 2

... RF Characteristics (In Freescale Test Fixture) Common - Source Amplifier Power Gain (V = 12.5 Vdc 800 mA) DD out DQ Drain Efficiency (V = 12.5 Vdc 800 mA) DD out DQ MRF1570NT1 MRF1570FNT1 2 = 25°C unless otherwise noted 470 MHz f = 470 MHz Symbol Min Typ Max I — — 1 DSS V 1 — ...

Page 3

... Microstrip 0.28″ x 0.240″ Microstrip 0.39″ x 0.080″ Microstrip 0.27″ x 0.080″ Microstrip 0.25″ x 0.080″ Microstrip 0.29″ x 0.080″ Microstrip 0.14″ x 0.080″ Microstrip 0.32″ x 0.080″ Microstrip ® 31 mil Glass Teflon MRF1570NT1 MRF1570FNT1 V DD C30 RF OUTPUT C32 C31 V DD ...

Page 4

... Figure 2. 135 - 175 MHz Broadband Test Circuit Component Layout TYPICAL CHARACTERISTICS, 135 - 175 MHz 100 80 135 MHz 60 175 MHz 40 150 MHz INPUT POWER (WATTS) in Figure 3. Output Power versus Input Power MRF1570NT1 MRF1570FNT1 4 C37 C38 C6 C10 C20 C22 C23 R4 C9 L10 L4 R2 ...

Page 5

... MHz 175 MHz 135 MHz V = 12.5 Vdc dBm in 600 800 1000 1200 1400 I , BIASING CURRENT (mA) DQ 155 MHz 175 MHz 135 MHz dBm 800 SUPPLY VOLTAGE (VOLTS) DD MRF1570NT1 MRF1570FNT1 175 MHz 135 MHz 80 90 1600 15 5 ...

Page 6

... Chip Capacitors C25, C26 15 pF, 100 mil Chip Capacitors C27, C28 2.2 pF, 100 mil Chip Capacitors C29, C30 6.2 pF, 100 mil Chip Capacitors C31 1.0 pF, 100 mil Chip Capacitor Figure 11. 400 - 470 MHz Broadband Test Circuit Schematic MRF1570NT1 MRF1570FNT1 C10 C9 C37 ...

Page 7

... Figure 14. Input Return Loss versus Output Power V DD C33 B3 B4 GND C37 C34 C35 C36 C27 L3 L5 C29 L1 C31 C32 L2 C30 L6 L4 C28 C39 C40 C41 C42 B5 B6 C38 V = 12.5 Vdc DD 440 MHz 400 MHz 470 MHz OUTPUT POWER (WATTS) out MRF1570NT1 MRF1570FNT1 ...

Page 8

... I , BIASING CURRENT (mA) DQ Figure 17. Output Power versus Biasing Current 100 SUPPLY VOLTAGE (VOLTS) DD Figure 19. Output Power versus Supply Voltage MRF1570NT1 MRF1570FNT1 12.5 Vdc Figure 16. Drain Efficiency versus Output Power 100 ...

Page 9

... Microstrip 0.17″ x 0.240″ Microstrip 0.12″ x 0.240″ Microstrip 0.14″ x 0.240″ Microstrip 0.15″ x 0.240″ Microstrip 0.18″ x 0.172″ Microstrip 1.23″ x 0.080″ Microstrip 0.12″ x 0.080″ Microstrip 0.40″ x 0.080″ Microstrip ® 31 mil Glass Teflon MRF1570NT1 MRF1570FNT1 RF 9 ...

Page 10

... TYPICAL CHARACTERISTICS, 450 - 520 MHz 100 80 470 MHz 60 450 MHz 500 MHz 40 520 MHz INPUT POWER (WATTS) in Figure 23. Output Power versus Input Power MRF1570NT1 MRF1570FNT1 10 C33 C24 C6 L3 C20 C22 C21 C23 C7 C25 R2 C5 ...

Page 11

... Figure 30. Drain Efficiency versus Supply Voltage 520 MHz 500 MHz 450 MHz 470 MHz V = 12.5 Vdc OUTPUT POWER (WATTS) out V = 12.5 Vdc dBm in 800 1200 I , BIASING CURRENT (mA dBm 800 SUPPLY VOLTAGE (VOLTS) DD MRF1570NT1 MRF1570FNT1 80 90 1600 15 11 ...

Page 12

... This above graph displays calculated MTTF in hours x ampere drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by I Figure 31. MTTF Factor versus Junction Temperature MRF1570NT1 MRF1570FNT1 12 TYPICAL CHARACTERISTICS 100 110 ...

Page 13

... W. OL Input Device Matching Under Test Network Ω 520 MHz f = 450 MHz 520 MHz out MHz Ω Ω 450 0.94 - j1.12 0.61 - j1.14 470 1.03 - j1.17 0.62 - j1.12 500 0.95 - j1.71 0.75 - j1.03 520 0.62 - j1.74 0.77 - j0.97 Output Matching Network MRF1570NT1 MRF1570FNT1 13 ...

Page 14

... One critical figure of merit for a FET is its static resistance in the full - on condition. This on - resistance the linear region of the output characteristic and is speci- fied at a specific gate - source voltage and drain current. The MRF1570NT1 MRF1570FNT1 14 APPLICATIONS INFORMATION drain - source voltage under these conditions is termed V ...

Page 15

... See Freescale Application Note AN215A, “RF Small - Signal Design Using Two - Port Parameters” for a discussion of two port network theory and stability. MRF1570NT1 MRF1570FNT1 15 ...

Page 16

... aaa aaa DATUM H PLANE c1 MRF1570NT1 MRF1570FNT1 16 PACKAGE DIMENSIONS (b1 NOTES: 1. CONTROLLING DIMENSION: INCH . 2. INTERPRET DIMENSIONS AND TOLERANCES SEATING C PER ASME Y14.5M, 1994. ...

Page 17

... E1 0.246 0.254 6.25 6.45 E2 0.170 BSC 4.32 BSC F 0.025 BSC 0.64 BSC P 0.126 0.134 3.20 3.40 b 0.105 0.111 2.67 2.82 b1 0.088 0.094 2.24 2.39 b2 0.066 0.072 1.68 1.83 b3 0.067 0.073 1.70 1.85 b4 0.077 0.083 1.96 2.11 c1 0.007 0.011 0.178 0.279 e 0.104 BSC 2.64 BSC e1 0.210 BSC 5.33 BSC e2 0.229 BSC 5.82 BSC aaa 0.004 0.10 bbb 0.008 0.20 MRF1570NT1 MRF1570FNT1 17 ...

Page 18

... For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program http://www.freescale.com/epp. MRF1570NT1 MRF1570FNT1 Document Number: MRF1570N Rev. 8, 9/2006 18 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products ...

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