mrf5s4125n Freescale Semiconductor, Inc, mrf5s4125n Datasheet - Page 6

• Manufacturer Part Number: mrf5s4125n
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

MRF5S4125NR1 MRF5S4125NBR1
6
−10
−20
−30
−40
−50
−60
−70
1
Figure 7. Intermodulation Distortion Products
V
f1 = 465 MHz, f2 = 467.5 MHz
Two −Tone Measurements, 2.5 MHz Tone Spacing
DD
= 28 Vdc
P
out
, OUTPUT POWER (WATTS) PEP
versus Output Power
5th Order
10
3rd Order
Figure 10. Single - Carrier N - CDMA ACPR, ALT1, Power
59
58
57
56
55
54
53
52
51
50
49
50
45
40
35
30
25
20
15
10
5
0
7th Order
24
1
P1dB = 51.16 dBm (130.62 W)
Gain and Drain Efficiency versus Output Power
85_C
P3dB = 52.26 dBm (168.27 W)
V
Single −Carrier N−CDMA
1.2288 MHz Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
Figure 9. Pulsed CW Output Power versus
DD
25
25_C
= 28 Vdc, I
TYPICAL CHARACTERISTICS
26
100
25_C
−30_C
P
out
27
DQ
, OUTPUT POWER (WATTS) AVG.
200
P
85_C
G
P6dB = 52.98 dBm (198.6 W)
= 1100 mA, f = 465 MHz
28
in
ps
, INPUT POWER (dBm)
85_C
300
Input Power
29
T
C
= −30_C
30
25_C
V
CW
f = 465 MHz
10
DD
31
−10
−20
−30
−40
−50
−60
= 28 Vdc, I
η
1
D
Figure 8. Intermodulation Distortion Products
32
V
I
(f1 + f2)/2 = Center Frequency of 465 MHz
IM5 −U
DQ
DD
= 1100 mA, Two −Tone Measurements
−30_C
= 28 Vdc, P
33
DQ
Ideal
= 1100 mA
IM5 −L
34
IM3 −U
ALT1
Actual
ACPR
out
IM7 −L
35
IM3 −L
versus Tone Spacing
TWO −TONE SPACING (MHz)
= 120 W (PEP)
IM7 −U
36
60
−25
−30
−35
−40
−45
−50
−55
−60
−65
−70
−75
10
Freescale Semiconductor
RF Device Data
100