mrf7s18125ah Freescale Semiconductor, Inc, mrf7s18125ah Datasheet - Page 2

• Manufacturer Part Number: mrf7s18125ah
• Description: N - Channel Enhancement - Mode Lateral Mosfets
• Manufacturer: Freescale Semiconductor, Inc

2
MRF7S18125AHR3 MRF7S18125AHSR3
Table 3. ESD Protection Characteristics
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) V
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Zero Gate Voltage Drain Leakage Current
Zero Gate Voltage Drain Leakage Current
Gate- Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Fixture Gate Quiescent Voltage
Drain- Source On - Voltage
Reverse Transfer Capacitance
Output Capacitance
Input Capacitance
Power Gain
Drain Efficiency
Input Return Loss
1. V
2. Part internally matched both on input and output.
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
schematic.
DS
DS
GS
DS
DS
DD
GS
DS
DD
DS
GG
= 65 Vdc, V
= 28 Vdc, V
= 5 Vdc, V
= 10 Vdc, I
= 28 Vdc, I
= 28 Vdc, I
= 10 Vdc, I
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 28 Vdc ± 30 mV(rms)ac @ 1 MHz, V
= 28 Vdc, V
= 2 x V
GS(Q)
DS
D
D
D
D
GS
GS
GS
= 316 μAdc)
= 1100 mAdc)
= 1100 mAdc, Measured in Functional Test)
= 3.16 Adc)
= 0 Vdc)
. Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
= 0 Vdc)
= 0 Vdc)
= 0 Vdc ± 30 mV(rms)ac @ 1 MHz)
(2)
Characteristic
(1)
Test Methodology
(T
C
= 25°C unless otherwise noted)
GS
GS
= 0 Vdc)
= 0 Vdc)
DD
= 28 Vdc, I
DQ
Symbol
V
V
V
V
I
I
I
DS(on)
C
GG(Q)
C
GS(th)
GS(Q)
C
G
GSS
= 1100 mA, P
IRL
DSS
DSS
η
oss
rss
iss
ps
D
15.5
Min
out
1.2
0.1
—
—
—
—
—
—
—
51
—
4
= 125 W CW, f = 1880 MHz
1.15
Typ
675
312
- 12
1.9
2.7
5.3
0.2
17
55
—
—
—
1B (Minimum)
IV (Minimum)
A (Minimum)
Class
Freescale Semiconductor
Max
18.5
2.7
0.3
10
—
—
—
—
—
- 6
1
1
7
RF Device Data
(continued)
μAdc
μAdc
μAdc
Unit
Vdc
Vdc
Vdc
Vdc
dB
dB
pF
pF
pF
%