mrf373r1 Freescale Semiconductor, Inc, mrf373r1 Datasheet - Page 2

• Manufacturer Part Number: mrf373r1
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
FUNCTIONAL CHARACTERISTICS, CW Operation
TYPICAL CHARACTERISTICS, 2 Tone Operation, Push Pull Configuration (MRF373SR1), Broadband Fixture
MRF373R1 MRF373SR1
Drain–Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate–Source Leakage Current
Gate Threshold Voltage
Gate Quiescent Voltage
Drain–Source On–Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Common Source Power Gain
Drain Efficiency
Load Mismatch
Common Source Power Gain
Drain Efficiency
Third Order Intermodulation Distortion
2
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
(V
Load VSWR at 5:1 at All Phase Angles)
(V
f1 = 860.0 MHz, f2 = 866 MHz)
(V
f1 = 860.0 MHz, f2 = 866 MHz)
(V
f1 = 860.0 MHz, f2 = 866 MHz)
GS
DS
GS
DS
DS
GS
DS
DS
DS
DS
DD
DD
DD
DD
DD
DD
= 0 Vdc, I
= 28 Vdc, V
= 20 Vdc, V
= 10 V, I
= 28 V, I
= 10 V, I
= 10 V, I
= 28 V, V
= 28 V, V
= 28 V, V
= 28 V, P
= 28 V, P
= 28 V, P
= 28 Vdc, P
= 28 Vdc, P
= 28 Vdc, P
D
D
D
D
GS
GS
GS
out
out
out
D
= 200 µA)
= 100 mA)
= 3 A)
= 3 A)
=1 µA)
GS
DS
out
out
out
= 0, f = 1 MHz)
= 0, f = 1 MHz)
= 0, f = 1 MHz)
= 60 W, I
= 60 W, I
= 60 W, I
= 0 Vdc)
= 0 Vdc)
= 100 W PEP, I
= 100 W PEP, I
= 100 W PEP, I
Characteristic
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2 005
DQ
DQ
DQ
= 200 mA, f = 860 MHz)
= 200 mA, f = 860 MHz)
= 200 mA, f = 860 MHz,
DQ
DQ
DQ
(T
= 400 mA,
= 400 mA,
= 400 mA,
C
= 25°C unless otherwise noted)
V
Symbol
V
V
V
(BR)DSS
I
C
I
DS(on)
GS(th)
GS(Q)
C
C
IMD
G
G
DSS
GSS
g
oss
η
ψ
η
iss
rss
fs
ps
ps
Min
2.2
65
13
50
–
–
2
3
–
–
–
–
–
–
–
No Degradation in Output Power
14.7
11.2
Typ
–30
MOTOROLA RF DEVICE DATA
0.6
2.9
79
46
54
40
–
–
–
3
4
4
Max
0.8
–
1
1
4
5
–
–
–
–
–
–
–
–
–
µAdc
µAdc
Unit
Vdc
Vdc
Vdc
Vdc
dBc
pF
pF
pF
dB
dB
%
%
S
Archived 2005