mrfe6s9060n Freescale Semiconductor, Inc, mrfe6s9060n Datasheet - Page 8

• Manufacturer Part Number: mrfe6s9060n
• Description: Rf Power Field Effect Transistor
• Manufacturer: Freescale Semiconductor, Inc

MRFE6S9060NR1
8
22
21
20
19
18
17
16
15
14
1
G
Figure 11. Power Gain and Drain Efficiency
ps
η
D
25_C
P
versus CW Output Power
T
out
C
, OUTPUT POWER (WATTS) CW
= −30_C
85_C
10
V
I
f = 880 MHz
DQ
DD
= 450 mA
= 28 Vdc
10
10
10
10
8
7
6
5
90
Figure 13. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at V
MTTF calculator available at http:/www.freescale.com/rf. Select Tools
(Software & Tools)/Calculators to access MTTF calculators by product.
TYPICAL CHARACTERISTICS
−30_C
110
100
85_C
25_C
130
T
DD
J
, JUNCTION TEMPERATURE (°C)
200
= 28 Vdc, P
80
70
60
50
40
30
20
10
0
150
out
170
= 14 W Avg., and η
22
21
20
19
18
17
16
0
190
Figure 12. Power Gain versus Output Power
20
210
D
= 32.5%.
P
out
40
230
, OUTPUT POWER (WATTS) CW
250
60
Freescale Semiconductor
80
V
DD
= 24 V
100
RF Device Data
28 V
I
f = 880 MHz
DQ
120
= 450 mA
32 V
140