mmft108t1 Freescale Semiconductor, Inc, mmft108t1 Datasheet - Page 2

• Manufacturer Part Number: mmft108t1
• Description: N?channel Enhancement?mode Logic Level
• Manufacturer: Freescale Semiconductor, Inc

MMFT108T1
PULSE GENERATOR
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (2)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
2. Pulse Test: Pulse Width
2
Drain–to–Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate–Body Leakage Current — Reverse
Gate Threshold Voltage
Static Drain–to–Source On–Resistance
Drain Cutoff Current
Input Capacitance
Output Capacitance
Transfer Capacitance
Turn–On Time (See Figure 1)
Turn–Off Time (See Figure 1)
(V GS = 0, I D = 10
(V DS = 130 V, V GS = 0)
(V GS = 15 Vdc, V DS = 0)
(I D = 1.0 mAdc, V DS = V GS )
(V GS = 2.0 Vdc, I D = 50 mA)
(V GS = 2.8 Vdc, I D = 100 mA)
(V GS = 0.2 V, V DS = 70 V)
50
Figure 1. Switching Test Circuit
m
A)
V in
50
300 s, Duty Cycle = 2.0%.
40 pF
Characteristic
1.0 M
+25 V
(T A = 25 C unless otherwise noted)
23
50 Ω ATTENUATOR
(V
(V DS = 25 V, V GS = 0,
f = 1.0 MHz)
f = 1.0 MHz)
20 dB
RESISTIVE SWITCHING
25 V V
Motorola Small–Signal Transistors, FETs and Diodes Device Data
0
TO SAMPLING SCOPE
50 Ω INPUT
V (BR)DSS
Symbol
V GS(th)
r DS(on)
OUTPUT
INVERTED
INPUT
V out
I GSS
I DSS
I DSX
C oss
C rss
C iss
t on
t off
V in
Figure 2. Switching Waveforms
V out
10 V
Min
200
0.5
—
—
—
—
—
—
—
—
—
—
10%
t on
50%
Typ
—
—
—
—
—
—
—
—
—
—
—
—
90%
PULSE
WIDTH
Max
150
90%
1.5
8.0
—
30
10
10
25
30
10
15
15
50%
t off
10%
Ohms
90%
nAdc
nAdc
Unit
Vdc
Vdc
m
pF
ns
ns
A