ma724 Panasonic Corporation of North America, ma724 Datasheet

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ma724

Manufacturer Part Number
ma724
Description
Schottky Barrier Diodes Sbd
Manufacturer
Panasonic Corporation of North America
Datasheet

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MA724
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Schottky Barrier Diodes (SBD)
MA4X724
Silicon epitaxial planar type
For super high speed switching
For small current rectification
I Features
I Absolute Maximum Ratings T
Note) * 1: Value per chip
I Electrical Characteristics T
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
O
Publication date: August 2001
• Two isolated elements are contained in one package, allowing
• Two MA3X721 (MA721) is contained in one package (of a type
• I
• Mini type 4-pin package
Reverse voltage (DC)
Repetitive peak reverse-voltage
Peak forward
current
Average forward
current
Non-repetitive peak Single
forward-surge-current
Junction temperature
Storage temperature
Reverse current (DC)
Forward voltage (DC)
Terminal capacitance
Reverse recovery time
high-density mounting
in the same direction)
F(AV)
* 2: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
2. Rated input/output frequency: 1 GHz
and the leakage of current from the operating equipment.
= 200 mA rectification is possible
Parameter
Parameter
Pulse Generator
(PG-10N)
R
s
= 50 Ω
* 2
Bias Application Unit N-50BU
Double
Single
Double
Double
Single
*
A
* 1
* 1
* 1
O
O
O
(MA724)
Wave Form Analyzer
(SAS-8130)
R
i
Symbol
= 50 Ω
V
I
I
F(AV)
T
I
V
FSM
RRM
T
FM
stg
R
a
j
Symbol
= 25°C
V
I
C
t
a
R
rr
F
t
= 25°C
−55 to +150
Rating
0.75
300
225
200
150
150
3. * : t
30
30
1
V
I
V
I
I
F
F
rr
Note) The part number in the parenthesis shows conventional part number.
R
R
= 200 mA
= I
= 10 mA, R
V
SKH00105AED
rr
= 30 V
= 0 V, f = 1 MHz
R
R
measuring instrument
= 100 mA
t
r
Input Pulse
10%
t
t
δ = 0.05
p
r
90%
= 0.35 ns
Unit
= 2 µs
mA
mA
°C
°C
V
V
A
Conditions
t
p
L
= 100 Ω
t
I
F
I
I
R
Output Pulse
F
R
Marking Symbol: M1T
Internal Connection
L
0.60
= 100 mA
= 100 mA
= 100 Ω
(0.2)
I
+0.10
–0.05
t
rr
rr
= 10 mA
10°
t
(0.95)
2.90
3
1.9
2
Min
±0.2
+0.02
–0.05
(0.95)
2
3
0.5R
Typ
3.0
30
4
1
1
4
Mini4-G1 Package
Max
0.55
50
0.16
1 : Cathode 1
2 : Cathode 2
3 : Anode 2
4 : Anode 1
EIAJ : SC-61
+0.1
–0.06
Unit: mm
Unit
µA
pF
ns
V
1

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ma724 Summary of contents

Page 1

... Schottky Barrier Diodes (SBD) MA4X724 (MA724) Silicon epitaxial planar type For super high speed switching For small current rectification I Features • Two isolated elements are contained in one package, allowing high-density mounting • Two MA3X721 (MA721) is contained in one package (of a type in the same direction) • ...

Page 2

MA4X724  100°C 25° 150°C −20° −1 10 − 0.2 0.4 0.6 0 Forward voltage V F  ...

Page 3

... No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. ...

Page 4

... This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components. ...

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