gt8g136 TOSHIBA Semiconductor CORPORATION, gt8g136 Datasheet

gt8g136

Manufacturer Part Number

gt8g136

Description

Toshiba Insulated Gate Bipolar Transistor Silicon N Channel Igbt

Manufacturer

TOSHIBA Semiconductor CORPORATION

Datasheet

1.GT8G136.pdf (6 pages)

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Lot No.

Strobe Flash Applications

•

Absolute Maximum Ratings

Thermal Characteristics

Marking

Note : For (Note 1) , (Note 2a) , (Note 2b) and (Note 3) , Please refer to the

next page.

Compact and Thin (TSSOP-8) package

Enhancement-mode

Peak collector current: I

Collector-emitter voltage

Gate-emitter voltage

Collector current

Collector power

dissipation（t＝10 s）

Junction temperature

Storage temperature range

Note: Using continuously under heavy loads (e.g. the application of high

Thermal resistance , junction to

ambient

Thermal resistance , junction to

ambient

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

8G136

temperature/current/voltage

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba

Precautions”/Derating Concept and Methods) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

Characteristics

(t = 10 s)

(Note 3)

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

Semiconductor

(Note 2a)

(Note 2b)

(@V

(Note 1)

(Note2a)

(Note2b)

Part No. (or abbreviation code)

Pulse

= 150 A (max)

=3.0V(min),Ta=70℃(max))/

Reliability

(Ta = 25°C)

and

Symbol

th (j-a)

CES

GES

stg

GT8G136

(1)

(2)

the

(1)

(2)

significant

Handbook

−55~150

Rating

400

150

1.1

0.6

± 6

± 8

114

208

change

(“Handling

°C/W

Unit

°C

Weight: 0.035 g (typ.)

JEDEC

JEITA

TOSHIBA

Circuit Configuration

1,2

5,6,7,8 COLLECTOR

EMITTER

EMITTER (Gate drive connection)

GATE

8 7

2 3

GT8G136

2007-04-23

―

－

Unit: mm

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gt8g136 Summary of contents

Page 1

... T 150 j −55~150 T stg and the significant change Reliability Handbook (“Handling Symbol Rating R (1) 114 th (j-a) R (2) 208 th (j-a) 1 GT8G136 Unit 1,2 EMITTER °C 3 EMITTER (Gate drive connection) °C 4 GATE 5,6,7,8 COLLECTOR JEDEC ― in JEITA ― TOSHIBA － Weight: 0.035 g (typ.) Circuit Configuration ...

Page 2

... < = 100 Duty cycle < off Note 2b : Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (unit : mm) 2 GT8G136 Min Typ. Max Unit ⎯ ⎯ ± 10 ⎯ ⎯ 10 0.65 1.0 1.35 ⎯ ⎯ 3.5 ⎯ ⎯ 2500 ⎯ ⎯ 1.5 ⎯ ...

Page 3

... You should be design to don’t flow collector current through terminal number 3 . ●definition of dv/dt The slope of V from 30v to 90v (attached figure.1) CE dv/dt = (90V-30V) / (⊿t) = 60V / ⊿t ●waveform C(begin 0V, 0A ●Gate drive connection 5,6,7,8 1,2 ●waveform (expansion) I (end) C dv/dt period GT8G136 V CE 90V 30V ⊿t driver 2007-04-23 ...

Page 4

... Collector-emitter voltage V CE (V) 160 3.5 3.0 120 2 600 500 400 300 200 100 0 0 1000 4 GT8G136 I – 3 4.0 V 3.0 2.5 Common emitter Ta = 25° – −10° Common emitter ...

Page 5

... 350 V 200 Ta < = 70° 3 Ω < < = 300 Ω Peak collector current I CP (A) 5 GT8G136 Switching Time – off Common emitter 300 Ω 25°C 100 150 200 Collector current I C (A) ...

Page 6

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 GT8G136 20070701-EN 2007-04-23 ...

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