gt8g151 TOSHIBA Semiconductor CORPORATION, gt8g151 Datasheet

no-image

gt8g151

Manufacturer Part Number
gt8g151
Description
Toshiba Insulated Gate Bipolar Transistor Silicon N Channel Igbt
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
Note: Using continuously under heavy loads (e.g. the application of high
Strobe Flash Applications
Absolute Maximum Ratings
Thermal Characteristics
Marking
• Enhancement-mode
• Low gate drive voltage:
• Peak collector current:
• Compact and Thin (TSON-8) package
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.)
are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/Derating
Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Collector-emitter voltage
Gate-emitter voltage
Collector current
Collector power
dissipation(t = 10 s)
Junction temperature
Storage temperature range
Thermal resistance , junction to
ambient
Thermal resistance , junction to
ambient
Note : For (Note 1) , (Note 2a) , (Note 2b) , (Note 3) and (Note 4) .
Pin #1
Characteristics
(Note 3, Note 4)
(t = 10 s)
(t = 10 s)
Characteristics
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Pulse (Note 1)
(Note 2a)
(Note 2b)
8
1
8G151
Pulse
(Note2a)
(Note2b)
DC
7
2
V
I
C
GE
6
3
= 150 A (max)
= 2.5 V (min.) (@I
5
4
(Ta = 25°C)
R
R
Symbol
th (j-a) (1)
th (j-a) (2)
Symbol
P
P
V
V
V
T
I
C
C
GES
GES
CES
CP
T
stg
GT8G151
(1)
(2)
j
Part No. (or abbreviation code)
Product-specific code
Lot No
−55 to 150
C
Rating
Rating
= 150 A)
150
180
0.83
0.69
400
150
150
± 4
± 5
1
°C/W
°C/W
Unit
Unit
°C
°C
W
W
V
V
A
Weight: 0.02 g (Typ.)
Circuit Configuration
JEDEC
JEITA
TOSHIBA
TSON-8
TSON-8
1,2,3
4
5,6,7,8 Collector
1.2.3.
1.2.3.
4.
4.
5.6.7.8. コレクタ
5.6.7.8. コレクタ
8
8
1 2
1 2
3.3±0.1
3.3±0.1
3.1±0.1
3.1±0.1
8
1
7 6
7 6
3
3
7
2
5
5
4
4
エミッタ
エミッタ
Gate
Emitter
ゲート
ゲート
2-3Y1A
6
3
GT8G151
2010-08-12
5
4
0.3±0.05
0.3±0.05
Unit: mm
Unit: mm
0.65±0.05
0.65±0.05

Related parts for gt8g151

gt8g151 Summary of contents

Page 1

... C T 150 j −55 to 150 T stg Symbol Rating Unit R 150 °C/W th (j-a) (1) R 180 °C/W th (j-a) (2) Part No. (or abbreviation code) 5 Product-specific code Lot GT8G151 TSON-8 TSON Unit 3.1±0.1 3.1±0.1 V 3.3±0.1 3.3±0 1.2.3. 1.2.3. ...

Page 2

... < = 100 Duty cycle < off Note 2b : Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit:mm) for Collector 2 GT8G151 Min. Typ. Max. ⎯ ⎯ ± 10 ⎯ ⎯ 10 0.5 0.9 ― ⎯ ⎯ 2.65 ⎯ ⎯ 2580 ⎯ ⎯ 2.2 ⎯ ...

Page 3

... C(end) dv/dt period Figure These outside pin are same collector voltage. 7 6 5 2 3 4 3 GT8G151 90V 30V ⊿t PIN ASSIGNMENT 1,2,3 :Emitter 4 :Gate 5,6,7,8 :Collector 2010-08- ...

Page 4

... Common emitter Ta=70℃ (V) CE  1.6 25℃ 1.2 0.8 0.4 Common emitter V = -50  ( GT8G151 I -     2.7V 2. =2.3V GE Common emitter Ta=25℃ Collector - emitter voltage V (V) CE   V  -  Ta CE(sat) I =150A C ...

Page 5

... CM Ta≦70℃ V =2.5V GE 56Ω≦R 160 ≦91Ω G 120 160 200 0  ( GT8G151 C - V CE Cies Common emitter f=1MHz Ta=25℃ Coes Cres 10 100 Collector - emitter voltage V  (V) CE Switching time - I C t ...

Page 6

... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 GT8G151 2010-08-12 ...

Related keywords