gt30j322 TOSHIBA Semiconductor CORPORATION, gt30j322 Datasheet

gt30j322

Manufacturer Part Number

gt30j322

Description

Toshiba Insulated Gate Bipolar Transistor Silicon N Channel Igbt

Manufacturer

TOSHIBA Semiconductor CORPORATION

Datasheet

1.GT30J322.pdf (6 pages)

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FOURTH-GENERATION IGBT

CURRENT RESONANCE INVERTER SWITCHING

APPLICATIONS

ABSOLUTE MAXIMUM RATINGS

EQUIVALENT CIRCUIT

FRD included between emitter and collector

Enhancement mode type

High speed

Low saturation voltage

Collector−Emitter Voltage

Gate−Emitter Voltage

Collector Current

Emitter−Collector Forward

Current

Collector Power Dissipation

(Tc = 25°C)

Junction Temperature

Storage Temperature Range

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT

CHARACTERISTIC

: t

: V

1ms

CE (sat)

= 0.25μs (Typ.) (I

SYMBOL

= 2.1V (Typ.) (I

GT30J322

GES

CES

stg

(Ta = 25°C)

= 50A)

−55~150

RATING

600

±20

100

150

= 50A)

MARKING

GT30J322

TOSHIBA

UNIT

°C

Weight: 5.8 g (typ.)

JEDEC

JEITA

TOSHIBA

Part No. (or abbreviation code)

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

2-16F1A

GT30J322

2006-11-01

⎯

Unit: mm

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