ngb8245n ON Semiconductor, ngb8245n Datasheet
ngb8245n
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ngb8245n Summary of contents
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... MARKING DIAGRAM 4 Collector NGB 8245NG AYWW 2 D PAK CASE 418B 1 3 STYLE 4 Gate Emitter 2 Collector NGB8245N = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION † Device Package Shipping 2 D PAK 800 / Tape & Reel (Pb−Free) Publication Order Number: ...
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UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS Single Pulse Collector−to−Emitter Avalanche Energy 5 9 THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient (Note 1) Maximum Temperature for Soldering ...
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ELECTRICAL CHARACTERISTICS Characteristic Symbol SWITCHING CHARACTERISTICS Turn−On Delay Time (Resistive) t Rise Time (Resistive) Turn−Off Delay Time (Resistive) t Fall Time (Resistive) Turn−Off Delay Time (Inductive) t Fall Time (Inductive) 3. Pulse Test: Pulse Width v 300 mS, Duty Cycle ...
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TYPICAL ELECTRICAL CHARACTERISTICS 400 350 T = 25°C J 300 250 T = 175°C J 200 150 100 INDUCTOR (mH) Figure 1. Self Clamped Inductive Switching 2.0 1.75 1.5 1.25 1.0 0.75 0.5 0.25 ...
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TYPICAL ELECTRICAL CHARACTERISTICS 25° 175° 0.5 1 1 GATE TO EMITTER VOLTAGE (V) GE ...
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Duty Cycle = 0.5 0.2 0.1 10 0.05 1 0.02 0.01 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 Figure 13. Minimum Pad Transient Thermal Resistance (Non−normalized Junction−to−Ambient) 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single ...
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... REF 5.00 REF N P 0.079 REF 2.00 REF R 0.039 REF 0.99 REF S 0.575 0.625 14.60 15.88 0.045 0.055 1.14 1.40 V STYLE 4: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1.016 5.08 0.04 0.20 3.05 0.12 mm SCALE 3:1 inches ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NGB8245N/D ...