sir424dp Vishay, sir424dp Datasheet

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sir424dp

Manufacturer Part Number
sir424dp
Description
N-channel 20-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
sir424dp-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
sir424dp-T1-GE3
0
Company:
Part Number:
sir424dp-T1-GE3
Quantity:
180
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 70 °C/W.
Document Number: 64830
S09-0854-Rev. A, 18-May-09
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Avalanche Energy
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
Ordering Information: SiR424DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
PRODUCT SUMMARY
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is
not required to ensure adequate bottom side solder interconnection.
V
DS
20
(V)
8
6.15 mm
D
7
C
D
= 25 °C. Package limited.
0.0074 at V
0.0055 at V
6
D
PowerPAK SO-8
R
www.vishay.com/ppg?73257
Bottom View
5
DS(on)
D
GS
GS
J
(Ω)
1
= 150 °C)
= 4.5 V
= 10 V
b, f
S
2
S
N-Channel 20-V (D-S) MOSFET
3
S
5.15 mm
4
I
D
30
30
G
(A)
). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
Steady State
a
a
d, e
t ≤ 10 s
T
T
T
T
L = 0.1 mH
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
A
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C, unless otherwise noted
Q
9.6 nC
g
(Typ.)
Symbol
R
R
thJA
thJC
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
DS
GS
AS
D
S
D
FEATURES
APPLICATIONS
stg
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• Compliant to RoHS Directive 2002/95/EC
• Buck Converters
• DC/DC
Definition
100 % UIS Tested
POL
Typical
2.4
21
g
Tested
®
Power MOSFET
- 55 to 150
23.4
18.7
4.8
3.1
Limit
± 20
41.7
26.7
4
260
30
30
30
20
70
35
61
b, c
b, c
b, c
a
a
b, c
b, c
a
Maximum
G
3.0
26
N-Channel MOSFET
Vishay Siliconix
SiR424DP
D
S
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
A
1

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sir424dp Summary of contents

Page 1

... Bottom View Ordering Information: SiR424DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Avalanche Current Avalanche Energy Continuous Source-Drain Diode Current Maximum Power Dissipation ...

Page 2

... SiR424DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... S09-0854-Rev. A, 18-May-09 1.2 1.0 0.8 0 0.4 0.2 0.0 1.5 2.0 1600 1200 800 400 80 100 120 1.7 1.5 1 1.1 0.9 0 SiR424DP Vishay Siliconix ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss Drain-to-Source Voltage (V) ...

Page 4

... SiR424DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 ° 150 ° 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.5 0.2 - 0.1 - 0.4 - 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.020 0.015 0.010 °C J 0.005 0.000 0.8 1.0 1 ...

Page 5

... Package Limited Case Temperature (°C) C Current Derating* 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) SiR424DP Vishay Siliconix 100 125 150 2.20 1.76 1.32 0.88 0.44 0. 100 T - Ambient Temperature (°C) A Power, Junction-to-Ambient www ...

Page 6

... SiR424DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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