stn4412 Stanson Technology Co., Ltd., stn4412 Datasheet
stn4412
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stn4412 Summary of contents
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... DESCRIPTION STN4412 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching ...
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... Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STN4412 N Channel Enhancement Mode MOSFET Symbol Typical VDSS VGSS ±20 TA=25℃ ID 6.8 5.6 TA=70 ℃ IDM IS 2.3 TA=25℃ 2.8 PD 1.6 TA=70 ℃ TJ 150 TSTG -55/150 RθJA Copyright © 2007, Stanson Corp. 6.8A Unit ℃ ℃ ℃ STN4412 2007. V1 ...
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... V =15V,R =15Ω =1A,V =-10V D GEN d(off) R =6Ω STN4412 6.8A Min Typ Max Unit 30 V 1.0 3 ±100 mΩ 0.8 1 2.5 450 240 Copyright © 2007, Stanson Corp. STN4412 2007. V1 ...
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... TYPICAL CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STN4412 N Channel Enhancement Mode MOSFET Copyright © 2007, Stanson Corp. STN4412 2007. V1 6.8A ...
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... TYPICAL CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STN4412 N Channel Enhancement Mode MOSFET Copyright © 2007, Stanson Corp. STN4412 2007. V1 6.8A ...
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... PACKAGE OUTLINE SOP-8P STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com STN4412 N Channel Enhancement Mode MOSFET Copyright © 2007, Stanson Corp. STN4412 2007. V1 6.8A ...